GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has signed an agreement for Japanese company Daito Electron Co Ltd ...
Tags: GaN Systems, Daito Electron, Electrical
Raytheon UK’s semiconductor business unit in Glenrothes, Scotland, UK has been selected by a “leading automotive manufacturer” to develop a silicon carbide (SiC)-based metal-oxide-semiconductor field-effect transistor ...
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is exhibiting at the Electronica 2014 trade fair in Munich, Germany ...
Tags: GaN Systems, semiconductors
Electrical test instrument and system provider Keithley Instruments Inc of Cleveland, OH, USA has introduced new enhancements to its parametric curve tracer (PTC) configurations that incorporate high-power SourceMeter source measure unit ...
Tags: Metal Foil, test instrument
The next-generation power semiconductor market will increase at a compound annual growth rate (CAGR) of 63% between 2011 and 2017 to more than $500m, forecasts market research firm The Information Network in its report 'Next-Generation ...
Tags: Power Semiconductor, Electronics
In booth 419 at the IEEE Energy Conversion Congress & Expo (ECCE 2014) in Pittsburgh, PA, USA (14–18 September), GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching ...
Deposition equipment maker Aixtron SE of Aachen, Germany has teamed up with research institution Fraunhofer IISB (Institute for Integrated Systems and Device Technology) in Erlangen, Germany, to develop 150mm silicon carbide (SiC) epitaxy ...
Tags: Aixtron CVD SiC, Electrical, Electronics
Cree Inc of Durham, NC, USA says that its C2M, 1200V, 80mΩ silicon carbide (SiC) MOSFETs have been selected by Japan's Sanix Inc, to be designed into their new 9.9kW three-phase solar inverters for use in the construction of ...
Tags: Cree SiC MOSFET, Solar Inverters, Solar, Electrical, Electronics
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has signed an exclusive worldwide distribution agreement with ...
Tags: GaN Systems, Power electronics
Mouser Electronics, Inc., a leading engineering resource and global distributor of semiconductors and electronic components, has been named European E-Commerce Distributor of the Year by Vishay Intertechnology, one of the world’s ...
Tags: Mouser Electronics, E-Commerce Distributor, Electrical
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that, on 3 September (at 11am-12pm ...
Tokyo-based Mitsubishi Electric Corp has launched a transfer-molded super-mini dual in-line package power factor correction (DIPPFC) module incorporating silicon carbide (SiC) transistors and diodes that is expected to help reduce the power ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, is to give application-focused ...
Tags: EPC, E-mode, GaN, FETs, Electrical, Electronics
Vishay Intertechnology, Inc. VSH +0.23% today announced that it will be exhibiting its latest semiconductors and passive components in booth 1C-205 at Power System Japan, a focused exhibition on power systems at Techno-Frontier 2014, being ...
Tags: Vishay, Electrical, Electronics
Agilent Technologies Inc of Santa Clara, CA, USA has announced several innovations for the 2014 release of its suite of device modeling and characterization software tools. The suite comprises the Integrated Circuits Characterization and ...
Tags: GaN HEMTs, 3D Finfets