Fabless high-temperature and and extended-lifetime semiconductor firm CISSOID of Mont-Saint-Guibert, Belgium has delivered the first prototypes of a three-phase 1200V/100A silicon carbide (SiC) MOSFET intelligent power module (IPM) to ...
Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that its GaN-on-SiC RF power transistors have completed testing ...
HRL Laboratories LLC in the USA has developed a gallium nitride (GaN) vertical tunneling Schottky barrier diode (TBS) that gives good combined on and off performance, compared with vertical Schottky barrier diodes (SBDs) [Y. Cao et al, ...
The US Department of Defense's Air Force Research Laboratory, Sensors Directorate, Devices for Sensing Branch (AFRL/RYDD) has issued a Request For Information (RFI) titled 'Development of Large Diameter Silicon Carbide Substrate and ...
Shigeya Kimura, Hisashi Yoshida, Toshihide Ito, Aoi Okada, Kenjiro Uesugi and Shinya Nunoue Metal organic chemical vapor deposition is used to grow aluminum gallium nitride interlayers within indium gallium nitride/gallium nitride ...
The Semiconductor's business unit of Raytheon UK in Glenrothes, Scotland (a subsidiary of Raytheon Company of Waltham, MA, USA) and Newcastle University's School of Electrical and Electronic Engineering have collaborated to produce silicon ...
Tags: Raytheon, Newcastle University, Sic-Based Analog Circuitry
Led by adoption across various market segments, the gallium nitride (GaN) RF device market will double over the next five years, reckons Yole Développement in its new report 'GaN RF Devices Market: Applications, Players, Technology, ...
GE Aviation (an operating unit of GE) has been awarded a $2.1m contract from the US Army to develop and demonstrate silicon carbide (SiC)-based power electronics supporting high-voltage next-generation ground vehicle electrical power ...
Tags: GE Aviation, SiC power devices
Fairchild Semiconductor of San Jose CA, USA has launched its first 1200V silicon carbide (SiC) diode, the FFSH40120ADN, in its series of upcoming SiC solutions. The 1200V diode's combination of switching performance, reliability and low ...
Tags: Fairchild
In booth 1655 at the Applied Power Electronics Conference & Exposition (APEC 2016) in Long Beach, CA, USA (20–24 March), Monolith Semiconductor Inc of Round Rock, TX, USA is demonstrating its fast-switching silicon carbide (SiC) ...
Tags: SiC MOSFET, SiC Schottky barrier diodes, SiC power devices
Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that, as of the end of 2015, it had shipped gallium nitride on ...
Tags: Wolfspeed, Research Triangle Park
X-FAB Silicon Foundries of Erfurt, Germany - a mixed-signal IC, sensor and micro-electro-mechanical systems (MEMS) foundry – has entered wide-bandgap semiconductor production by announcing the availability of silicon carbide (SiC) ...
Tags: SiC MOSFET SiC Schottky barrier diodes SiC power devices
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that Seoul-based LG Innotek (a subsidiary of South Korean electronics company LG Group) has selected an AIX G5 WW (Warm-Wall) reactor for the development of ...
Tags: SiC Epiwafers, Aix G5 WW System
Energized by demand from hybrid and electric vehicles, power supplies and photovoltaic (PV) inverters, the emerging global market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors will rise from just $210m in 2015 to ...
Tags: Semiconductor Market, GaN, SiC
The LH4110W high-pressure pump has a height of over 1.8 m and a net weight of around 1.3 tonnes. The LH pumps water with particles up to 8 mm in diameter vertically upwards, reaching up to 216 m. "This is the strongest performing pump of ...
Tags: Tsurumi, Dewatering Model, Bauma 2016