SiC Schottky barrier diodes articles & resources on Made-in-China.com

Toshiba Adds Second-Generation 650V SiC Schottky Barrier Diodes in DPAK Surface-Mount Package

Oct 24, 2017

Toshiba Electronic Devices & Storage Corp (TDSC) - spun off from Toshiba Corp in July - has enhanced its diode portfolio with the addition of six Schottky barrier diodes (SBDs) fabricated with silicon carbide (SiC) and housed in ...

Tags: Toshiba, Schottky Barrier, Package

Rohm Expands Full-SiC Power Module Lineup

May 23, 2017

Japan’s ROHM Semiconductor has developed 1200V 400A/600A-rated full-silicon carbide (SiC) power modules [BSM400D12P3G002/BSM600D12P3G001] - available in June (for samples and OEM quantities) - optimized for inverters and converters in ...

Tags: power modules, Semiconductor

Rohm Showcasing New Third-Generation 650V SiC Schottkys and 1200V/180A Full-SiC Modules at PCIM

Apr 21, 2016

In hall 9, booth 316 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremberg, Germany (10-12 May), Japan's Rohm Semiconductor is showcasing its latest power products for high-speed switching and high-power performance, while ...

Tags: Rohm SiC Schottky barrier diodes SiC power MOSFET

Monolith Demonstrating Fast-Switching SiC MOSFETs At APEC

Mar 16, 2016

In booth 1655 at the Applied Power Electronics Conference & Exposition (APEC 2016) in Long Beach, CA, USA (20–24 March), Monolith Semiconductor Inc of Round Rock, TX, USA is demonstrating its fast-switching silicon carbide (SiC) ...

Tags: SiC MOSFET, SiC Schottky barrier diodes, SiC power devices

Littelfuse Invests in Silicon Carbide Switch Maker Monolith

Dec 22, 2015

As part of its strategy to move more significantly into power semiconductors for industrial and automotive markets, Littelfuse Inc of Chicago, IL, USA has made an investment in silicon carbide (SiC) diode and MOSFET supplier Monolith ...

Tags: SiC MOSFET, SiC Schottky barrier diodes, SiC power devices, Electrical

Rohm Expands Full-Sic Power Module Lineup with 1200V/300A Model for High-Power Inverters and Converters in Solar Power Conditioners and Industrial Equipment

Dec 2, 2015

Power semiconductor device manufacturer Rohm Co Ltd of Kyoto, Japan has developed a 1200V/300A full-SiC (silicon carbide) power module - integrating a SiC-SBD (Schottky barrier diode) and SiC-MOSFET (metal-oxide-semiconductor field-effect ...

Tags: Rohm, SiC Schottky barrier diodes, SiC power MOSFET

Japan's Rohm Started Mass Production of Silicon Carbide Mosfet

Jun 9, 2015

Japan's Rohm Co Ltd has started mass production of what it claims is the first silicon carbide (SiC) MOSFET (metal-oxide-semiconductor field-effect transistor) with a trench structure (where the gate is formed on the sidewall of a groove in ...

Tags: ROHM Semiconductor SiC power MOSFET, Sic Mosfet

Mitsubishi Electric Launched a Transfer-Molded Super-Mini DIPPFC Module

Aug 20, 2014

Tokyo-based Mitsubishi Electric Corp has launched a transfer-molded super-mini dual in-line package power factor correction (DIPPFC) module incorporating silicon carbide (SiC) transistors and diodes that is expected to help reduce the power ...

Tags: Mitsubishi Electric, SiC power modules

Toshiba Corp's Expanded Its Family of 650V Silicon Carbide Schottky Barrier Diodes

Jun 4, 2014

Toshiba Corp’s Semiconductor & Storage Products Company has expanded its family of 650V silicon carbide (SiC) Schottky barrier diodes (SBDs) with the addition of insulated TO-220F-2L packaged products. Mass production shipment has ...

Tags: Toshiba, Semiconductor, Storage Products

Toshiba Is Expanding Its Family of 650V SiC Schottky Barrier Diodes

Oct 28, 2013

With analysts predicting significant growth in the silicon carbide (SiC) power device market, in order to meet an anticipated spike in demand Japan’s Toshiba is expanding its family of 650V SiC Schottky barrier diodes (SBD). The ...

Tags: Toshiba, SiC Schottky

Toshiba Expanded Its Family of 650V Silicon Carbide Schottky Barrier Diodes

Sep 20, 2013

Tokyo-based Toshiba Corp has expanded its family of 650V silicon carbide (SiC) Schottky barrier diodes (SBD) with the addition of a 10A product to its existing line-up of 6A, 8A and 12A products (which operate with a forward voltage of 1.7V ...

Tags: Toshiba, Electrical, Electronics

SiC Schottky barrier diodes

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