The universities of Virginia and of Texas in the USA have been developing avalanche photodiodes (APDs) based on aluminium indium arsenide antimonide (AlInAsSb) alloys. Two papers from the group detail the implementation of a staircase ...
Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...
Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that Seoul-based LG Innotek (a subsidiary of South Korean electronics company LG Group) has selected an AIX G5 WW (Warm-Wall) reactor for the development of ...
Tags: SiC Epiwafers, Aix G5 WW System
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that UK-based Plessey Semiconductors Ltd has ordered an AIX G5+ C cluster system (for delivery in third-quarter 2016) to expand its production capacity for ...
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany received the CS High-Volume Manufacturing Award 2016 for its new fully automated AIX G5+ C metal-organic chemical vapor deposition (MOCVD) system at this year's CS ...
Tags: Aixtron, MOCVD, CS industry Awards, GaN-on-Si
After unveiling its third generation of in-situ metrology tools last October, in-situ metrology system maker LayTec AG of Berlin, Germany says that the EpiTT Gen3 is now available as the first representative of this Gen3 product class. ...
Tags: UV LED epitaxy, sapphire
University of California Santa Barbara (UCSB) in the USA has been developing a hybrid technique to create III-nitride tunnel junctions (TJs) using a combination of metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy ...
Tags: Gallium Nitride Tunnel, Hybrid
Yellow laser diodes with low thesholds have been produced by Jijun Feng (University of Shanghai for Science and Technology, China) and Ryoichi Akimoto (National Institute of Advanced Industrial Science and Technology (AIST), Japan) based on ...
Tags: Yellow lasers BeZnCdSe 560-590nm lasers, Ryoichi Akimoto, Electronics
The imec research center in Belgium has integrated high-mobility indium gallium arsenide (InGaAs) channels into three-dimensional (3D) vertical NAND charge-trap flash memory structures. The research was reported at the International ...
Université Grenoble Alpes in France and Applied Materials in the USA have been developing techniques to grow gallium arsenide (GaAs) on silicon substrates with a small offcut angle [Y. Bogumilowicz et al, Appl. Phys. Lett., vol107, ...
Tags: GaAs, Quasi-Nominal Silicon, MOVPE
University of Cyprus, Cyprus University of Technology, and University of Crete have been exploring the potential of Frster resonant energy transfer (FRET) from an indium gallium nitride (InGaN) single quantum well (SQW) to a light-emitting ...
Tags: InGaN, InGaN quantum well, FRET
Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has received two orders for research MBE machines. The Fraunhofer HHI (Heinrich Hertz Institute) in ...
Researchers in Germany are proposing scandium nitride (ScN) as a suitable buffer for gallium nitride (GaN) on silicon (Si) growth [L. Lupina et al, Appl. Phys. Lett., vol107, p201907, 2015]. The attraction of ScN is a very small mismatch ...
Tags: GaN devices, microscope
Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...
Tags: GaN-on-silicon LEDs, Plessey MOCVD
Electronic hardware and software design solutions provider Mentor Graphics Corp of Wilsonville, OR, USA says that Xiamen San'an Integrated Circuit Co Ltd (San'an IC) of Xiamen Torch High-tech Industrial Development Zone, China has selected ...
Tags: San'an, Mentor Graphics, GaAs