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MOVPE
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RIT Awarded NSF Grant for ICP-RIE Etch System for Photonics and Nanoelectronic Device R&D
Oct 12, 2016Jing Zhang, an engineering faculty member at Rochester Institute of Technology, has received a $305,000 grant from the US National Science Foundation (NSF) to acquire an inductively coupled plasma reactive-ion etching (ICP-RIE) system for ...
Tags: RIT, NSF, ICP-RIE system
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Integrating InGaAs Well in Ridges on 300mm Silicon
Sep 29, 2016Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...
Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University
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Wafer Reclaim for Indium Gallium Aluminium Phosphide Light Emission
Aug 19, 2016Researchers in Germany have been developing an epitaxial lift-off (ELO) process that would allow gallium arsenide (GaAs) substrates to be reused for indium gallium aluminium phosphide (InGaAlP) thin-film light-emitting diode (LED) ...
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Chemical Lift-off of Full-Wafer Gallium Nitride with Zinc Oxide Interlayer
Aug 10, 2016Researchers based in UK, France, Australia and the USA have developed a chemical epitaxial lift-off (ELO) technique for full 2-inch-diameter gallium nitride (GaN) grown on sapphire and free-standing substrates [Akhil Rajan et al, J. Phys. ...
Tags: GaN, HVPE, free-standing wafers
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Dependence of Efficiency Droop on Carrier Density in Non-Polar Samples
Jul 16, 2016The University of Manchester and the University of Cambridge in the UK have been comparing efficiency droop in low-temperature photoluminescence (PL) experiments on non-polar m-plane and polar c-plane indium gallium nitride (InGaN) quantum ...
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Epitaxial Growth of Laser Diodes on Wafer-Bonded InP/Si Substrates
Jun 12, 2016Sophia University in Japan has developed a technique for growing laser diodes on an indium phosphide (InP) layer bonded to silicon (Si) [Keiichi Matsumoto et al, Appl. Phys. Express, vol9, p062701, 2016]. The researchers claim that this is ...
Tags: Laser Diodes, Si Substrates
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Imec Integrates Indium Gallium Nitride Into Vertical Nand Memory Structure
Dec 21, 2015The imec research center in Belgium has integrated high-mobility indium gallium arsenide (InGaAs) channels into three-dimensional (3D) vertical NAND charge-trap flash memory structures. The research was reported at the International ...
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Single-Crystal Gallium Arsenide on Quasi-Nominal Silicon
Dec 16, 2015Université Grenoble Alpes in France and Applied Materials in the USA have been developing techniques to grow gallium arsenide (GaAs) on silicon substrates with a small offcut angle [Y. Bogumilowicz et al, Appl. Phys. Lett., vol107, ...
Tags: GaAs, Quasi-Nominal Silicon, MOVPE
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Low-Threading-Dislocation AlGaN Template for Ultraviolet Lasers
Nov 19, 2015Sandia National Laboratories in the USA has reported aluminium gallium nitride (AlGaN) laser structures emitting ~350nm ultraviolet radiation from optical and electrical pumping [Mary H. Crawford et al, Appl. Phys. Express, vol8, p112702, ...
Tags: AlGaN, ultraviolet lasers, LEDs
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KTH-Royal Institute Create Heterojunctions Consisting of N-InP and P-Type Silicon
Jun 16, 2015KTH-Royal Institute of Technology in Sweden has used corrugated epitaxial lateral overgrowth (CELOG) to create heterojunctions consisting of n-type indium phosphide (n-InP) and p-type silicon (p-Si) [Y. T. Sun et al, Appl. Phys. Lett., ...
Tags: corrugated epitaxial, silicon
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The Group of III-V Semiconductors Has Developed a Highly Conductive TJ Grown
May 30, 2014The Group of III-V Semiconductors of the Solar Energy Institute at the Technical University of Madrid (Instituto de Energía Solar at Universidad Politécnica de Madrid, IES-UPM) has developed a highly conductive, high-bandgap ...
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Researchers in Germany Have Developed 2DHG GaN Channel Structures
May 20, 2014Researchers in Germany have developed two-dimensional hole gas (2DHG) gallium nitride (GaN) channel structures with record mobility [B Reuters et al, J. Phys. D: Appl. Phys., vol47, p175103, 2014]. Mobility for 2DHGs in GaN is usually ...
Tags: Electrical, Electronics
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Lund University Has Developed MuG III-V Metal-Oxide-Semiconductor Field-Effect Transistor
Mar 11, 2014Lund University has developed multi-gate (MuG) III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) with a cut-off frequency of 210GHz and a maximum oscillation frequency of 250GHz, “the highest of any reported ...
Tags: effect transistors, fins, plasma, Electrical&Electronics
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Researchers in Japan Have Created Indium Phosphide Nanowire Solar Cell
Jan 9, 2014Researchers in Japan have created indium phosphide (InP) nanowire (NW) solar cell structures with internal quantum efficiencies (IQEs) that beat the performance of bulk InP-based devices in the short-wavelength range of 300-570nm [Masatoshi ...
Tags: INP Nanowire solar cells, InP SA-MOVPE p-type, InP substrates
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MOVPE Growth of AlGaAs on GaAs Is Limited by Lattice Mismatch
Dec 20, 2013It is known that metal-organic vapor phase epitaxy (MOVPE) growth of AlGaAs on GaAs is limited by lattice mismatch at room temperature and not at growth temperature (A. Maassdorf et.al., J. Cryst. Growth 370 (2013) 150-153), notes in-situ ...
Tags: Laser Structures, Electronics