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InP substrates
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Indium Gallium Arsenide Quantum Well Transistors on 300mm Silicon
May 18, 2017Researchers in South Korea and the USA claim record 2190cm2/V-s effective mobility for indium gallium arsenide (InGaAs) quantum well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) on 300mm-diameter (100) silicon ...
Tags: Transistors, MOSFETs
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WIN Launching Foundry Services For Optical Device Manufacturing
Mar 23, 2016WIN Semiconductors Corp of Tao Yuan City, Taiwan – the largest pure-play provider of compound semiconductor wafer foundry services – has announced its entry into the high-data-rate optical device market by adding optical device ...
Tags: WIN Semiconductors, InP
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AXT's Revenue Falls 12% in Q3
Nov 4, 2015For third-quarter 2015, AXT Inc of Fremont, CA, USA, which makes gallium arsenide (GaAs, indium phosphide (InP) and germanium (Ge) substrates and raw materials, has reported revenue of $18.4m, down 12.4% on $21m last quarter and down 20% on ...
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KTH-Royal Institute Create Heterojunctions Consisting of N-InP and P-Type Silicon
Jun 16, 2015KTH-Royal Institute of Technology in Sweden has used corrugated epitaxial lateral overgrowth (CELOG) to create heterojunctions consisting of n-type indium phosphide (n-InP) and p-type silicon (p-Si) [Y. T. Sun et al, Appl. Phys. Lett., ...
Tags: corrugated epitaxial, silicon
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Indium Gallium Arsenide on Insulator Transistors with Buried Yttrium Oxide
Apr 24, 2015Korea Institute of Science and Technology has presented what it says is the first demonstration of indium gallium arsenide on-insulator (In0.53Ga0.47As-OI) transistors with a buried yttrium oxide (Y2O3 BOX) layer [SangHyeon Kim et al, IEEE ...
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InGaAs Is a High-Mobility Semiconductor That Should Improve Transistor Characteristics
Apr 22, 2014Researchers in Taiwan have produced indium gallium arsenide (InGaAs) metal-oxide-semiconductor capacitors (MOSCAPs) with low interface trap densities directly on silicon [Yueh-Chin Lin etal, Appl. Phys. Express, vol7, p041202, 2014]. InGaAs ...
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Lund University Has Developed MuG III-V Metal-Oxide-Semiconductor Field-Effect Transistor
Mar 11, 2014Lund University has developed multi-gate (MuG) III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) with a cut-off frequency of 210GHz and a maximum oscillation frequency of 250GHz, “the highest of any reported ...
Tags: effect transistors, fins, plasma, Electrical&Electronics
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Researchers in Japan Have Created Indium Phosphide Nanowire Solar Cell
Jan 9, 2014Researchers in Japan have created indium phosphide (InP) nanowire (NW) solar cell structures with internal quantum efficiencies (IQEs) that beat the performance of bulk InP-based devices in the short-wavelength range of 300-570nm [Masatoshi ...
Tags: INP Nanowire solar cells, InP SA-MOVPE p-type, InP substrates
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UCSB Researchers Have Been Studying The Effect of Using Undoped Vertical Spacers
Dec 16, 2013University of California Santa Barbara (UCSB) researchers have been studying the effect of using undoped vertical spacers in the source and drain contacts to reduce off-state leakage in indium arsenide (InAs)-channel ...
Tags: Electrical, Electronics, Mosfets
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Onechip Photonics Integrated Circuits (PiCs) Fabricated in Indium Phosphide
Mar 18, 2013OneChip Photonics Inc of Ottawa, Canada, which designs optical chips and transceivers based on monolithic photonic integrated circuits (PICs) fabricated in indium phosphide (InP), says that it is working with both pure-play epiwafer foundry ...
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MIT Have Presented The Shortest-Gate Working Transistors Yet Built Using III-V Channels
Dec 27, 2012Researchers at Massachusetts Institute of Technology (MIT) have presented the shortest-gate working transistors yet built using III-V channels [J. Lin et al, IEDM, session 32.1]. The metal-oxide-semiconductor field-effect transistors ...
Tags: transistors, MIT, metal oxide semiconductor
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Purdue and Harvard Universities Have Produced Stacked NW Transistors
Dec 25, 2012Purdue and Harvard universities have produced stacked nanowire (NW) transistors with increased drive current and maximum transconductance. The results were presented on Wednesday 12 December at the International Electron Devices Meeting ...
Tags: Christmas Tree, 4d Electronics, nanowire transistors, wrap-around gates
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HKUST Has Grown High-Performance Indium Gallium Arsenide (InGaAs) Metal
Dec 25, 2012Hong Kong University of Science and Technology (HKUST) has grown high-performance indium gallium arsenide (InGaAs) metal–oxide–semiconductor high-electron-mobility transistors (MOSHEMTs) directly on silicon [Xiuju Zhou et al, ...
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InGaAs Devices Have Been Grown on Indium Phosphide (InP) Substrates
Dec 6, 2012Singapore researchers have developed high-mobility III-V indium gallium arsenide (InGaAs) channel n-type metal-oxide-semiconductor field-effect transistors (n-MOSFET) on germanium-on-insulator (GeOI) substrates [Ivana et al, Appl. Phys. ...
Tags: n-MOSFETs, metal-oxide-semiconductor, semiconductor, transistors
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Veeco Gen200 Edge MBE System Delivers Superior Throughput,Long Campaigns
Nov 28, 2012Brolis Semiconductors Ltd. and Veeco Instruments Inc. (Nasdaq: VECO) announced today that Brolis has received shipment of a Veeco GEN200® Edge™ Molecular Beam Epitaxy (MBE) production system for installation at their new epitaxial ...
Tags: Brolis Semiconductors, MBE systems, Veeco