Researchers at Purdue and Harvard universities have developed gallium arsenide (GaAs) enhancement-mode (E-mode) surface/n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with a maximum drain current of 336mA/mm, which ...
Tags: NMOSFETs, GaAs, GaAs transistor ALE
Structured Materials Industries Inc(SMI) of Piscataway, NJ, USA, which provides chemical vapor deposition (CVD) systems, components, materials, and process development services, has announced three updated products for process control ...
Tags: CVD Computer, Distribution Box, CVD Process
A team at Massachusetts Institute of Technology has developed an etch stop technique to improve performance of recessed-gate nitride semiconductor metal-insulator-semiconductor field-effect transistors (MISFETs) [Bin Lu et al, IEEE Electron ...
Tags: GaN MISFET GaN MOCVD, Electronics, Etch
Researchers in China have developed an atomic layer deposition (ALD) technique to create distributed Bragg reflectors (DBR) for increasing nitride semiconductor light-emitting diode (LED) output power by up to 43% [Hongjun Chen et al, Appl. ...
Tags: DBR ALD MOCVD LEDs GaN, Lighting, LED
Researchers from GLOBALFOUNDRIES, SEMATECH, and Massachusetts Institute of Technology (MIT) have extended their indium arsenide quantum well metal-oxide-semiconductor field-effect transistor (InAs QW MOSFET) technology to some of the ...
Researchers are aiming to develop a new class of materials with remarkable properties using one atom-thick substances such as graphene in a new collaborative project. The proposal, which will involve researchers from the Universities of ...
UK-based Oxford Instruments Plasma Technology (OIPT) reports that its first workshop held at MIT’s Microsystems Technology Laboratories (MTL), Cambridge, MA in December was well attended. The workshop addressed the latest research and ...
Tags: OIPT, Plasma, ALD PECVD, Microsystems Technology Laboratories
Based in Cambridge, Mass., Cambridge was a leader in atomic layer deposition (ALD) solutions with hundreds of system installations in research and manufacturing settings worldwide. Financial terms of the transaction were not disclosed. ...
Tags: atomic layer deposition, manufacturing settings, acquisition, Ultratech
Researchers at Massachusetts Institute of Technology (MIT) have presented the shortest-gate working transistors yet built using III-V channels [J. Lin et al, IEDM, session 32.1]. The metal-oxide-semiconductor field-effect transistors ...
Tags: transistors, MIT, metal oxide semiconductor
Ultratech, Inc., a supplier of lithography and laser-processing systems used to manufacture semiconductor devices and HB-LEDs, has acquired the assets of Cambridge Nanotech, Inc. (Cambridge). Based in Cambridge, Mass., Cambridge was a ...
Purdue and Harvard universities have produced stacked nanowire (NW) transistors with increased drive current and maximum transconductance. The results were presented on Wednesday 12 December at the International Electron Devices Meeting ...
Tags: Christmas Tree, 4d Electronics, nanowire transistors, wrap-around gates
Opens up new market opportunities in semiconductors, biomedical and energy Ultratech Inc of San Jose, CA, USA, which designs and manufactures photolithography and laser-processing systems used to make semiconductor devices and ...
Tags: semiconductors, biomedical, high brightness LEDs, LEDs
Hong Kong University of Science and Technology (HKUST) has grown high-performance indium gallium arsenide (InGaAs) metal–oxide–semiconductor high-electron-mobility transistors (MOSHEMTs) directly on silicon [Xiuju Zhou et al, ...
UK-based etch,deposition and growth system maker Oxford Instruments Plasma Technology(OIPT),part of Oxford Instruments plc,has introduced PT Elements,a free to download iPad App offering a clear and interactive periodic table of ...
Tags: OIPT, Oxford Instruments, Plasma Etch&Deposition Processing
Researchers in the USA have achieved record transconductance and cut-off frequencies for indium gallium arsenide (InGaAs) channel metal-oxide field effect transistors (MOSFETs) [D.-H. Kim et al, Appl. Phys. Lett., vol101, p223507, 2012]. ...