Researchers in China and Canada have developed air-bridge field plates for nitride semiconductor high-electron-mobility transistors (HEMTs) that increase the breakdown voltage and offer more stable performance at raised temperatures [Xie ...
University of Notre Dame (UND) in the USA and epiwafer maker IQE have claimed record-breaking balanced frequency performance for a nitride semiconductor high-electron-mobility transistor (HEMT) using indium aluminium gallium nitride ...
Suzhou Institute of Nano-tech and Nano-bionics (SINANO) in China has been using double-gated nitride semiconductor high-electron-mobility transistors (HEMTs) to understand the effects of field-plates in improving dynamic performance [Guohao ...
Tags: SINANO, China, double-gated nitride semiconductor, HEMTs
Researchers in Korea have used aluminium gallium nitride (AlGaN) heterostructures similar to high-electron-mobility transistors (HEMTs) to create Schottky barrier diodes (SBDs) with increased forward current without damaging the breakdown ...
Tags: aluminium gallium nitride, AlGaN, heterostructures, HEMTs
Researchers from GLOBALFOUNDRIES, SEMATECH, and Massachusetts Institute of Technology (MIT) have extended their indium arsenide quantum well metal-oxide-semiconductor field-effect transistor (InAs QW MOSFET) technology to some of the ...
Seoul National University and Korea Electronics Technology Institute have been developing hafnium dioxide (HfO2) as a gate insulator for aluminium gallium nitride (AlGaN) metal-oxide-semiconductor high-electron-mobility transistors ...
Tags: HfO2, gate insulator, Lights, Lighting
Researchers at University of Notre Dame and Kopin Corp have developed high-performance nitride semiconductor high-electron-mobility transistors (HEMTs) with indium gallium nitride (InGaN) channels [Ronghua Wang et al, Appl. Phys. Express, ...
Tags: semiconductor, high electron mobility transistors, InGaN
Researchers in Singapore claim the first DC and microwave performance measurements for 0.15μm-gate aluminium gallium nitride(AlGaN)on gallium nitride high-electron-mobility transistors(HEMTs)on silicon substrates with gold-free ...
Researchers at Massachusetts Institute of Technology (MIT) have presented the shortest-gate working transistors yet built using III-V channels [J. Lin et al, IEDM, session 32.1]. The metal-oxide-semiconductor field-effect transistors ...
Tags: transistors, MIT, metal oxide semiconductor
Researchers in China have designed and constructed a two-stage 2.5-5GHz low-noise amplifier(LNA)using enhancement-mode(normally-off)aluminium gallium arsenide(AlGaAs)pseudomorphic high-electron-mobility transistors(pHEMTs)[Peng Yangyang et ...
Tags: LNA AlGaAs AlGaAs pHEMT
Transphorm raises$35m in Series-E financing LED by Japan's INCJ Transphorm Inc of Goleta,near Santa Barbara,CA,USA(which designs and delivers power conversion devices and modules)has announced a$35m Series E financing round led by ...
Tags: Transphorm, GaN, HEMTs
Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits, FPGAs and customizable SoCs, and subsystems) has expanded its family of radio-frequency transistors based on gallium ...
Tags: Microsemi, GaN on SiC, radio frequency transistors, HEMT
Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that in Q3/2012 the Suzhou Institute of Nano-tech and Nano-bionics (SINANO), China, ordered two Aixtron Close Coupled Showerhead (CCS), metal organic chemical vapour ...
AIXTRON SE today announced that the Suzhou Institute of Nano-tech and Nano-bionics (SINANO), China, has made a purchase order for two AIXTRON Close Coupled Showerhead (CCS) systems to extend the center's nitride semiconductor research. The ...
Cree Inc of Durham,NC,USA has launched a range of 50V gallium nitride(GaN)high-electron-mobility transistor(HEMT)devices that,it is claimed,enable a significant reduction in the energy needed to power cellular networks. The world's ...
Tags: GaN RF, HEMT technology, cost saving, cellular-network