X-FAB Silicon Foundries AG of Erfurt, Germany and Exagan of Grenoble and Toulouse, France have entered into a joint development agreement to industrialize Exagan's GaN-on-silicon technology, begin producing high-speed power switching ...
Diamond Microwave Devices Ltd of Leeds, UK (which was spun out in 2006 from the diamond electronics team of Element Six and specializes in high-performance microwave power amplifiers) has re-designed its range of gallium nitride (GaN)-based ...
Cree Inc of Durham, NC, USA has launched two gallium nitride (GaN) high-electron-mobility transistor (HEMT) RF devices that are said to solve a number of long-standing issues for radar systems employing traditional travelling wave tube ...
Tags: GaN HEMTs, TWT Amplifiers
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched its fourth generation of gallium nitride on ...
Tags: GaN Technology, silicon carbide
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the UK's University of Cambridge has ordered its Propel Power gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) ...
Tags: GaN-on-Si, Power Electronics, LEDs
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching transistors based on its proprietary Island Technology for power conversion and control applications, has signed an agreement with ...
X-ray-based in-line metrology and defect detection tool maker Jordan Valley Semiconductors Ltd (JVS) of Migdal Haemek, Israel has received a strategic order for its QC3 high-resolution x-ray diffraction (HR-XRD) system for strain and ...
Global LED lighting market value reached JPY1.7 trillion (US$48.7 billion) in 2014, accounting for 28.9% of total lighting value, and will increase to JPY5.5 trillion in 2020, with the corresponding market value proportion to rise to 58%, ...
Tags: LED Lighting, LED Market
At the 30th IEEE Applied Power Electronics Conference and Exposition (APEC 2015) in Charlotte, NC, USA (15-19 March), Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and provides gallium nitride-based power conversion ...
Tags: Transphorm, APEC, Electronics
At the 30th IEEE Applied Power Electronics Conference & Exposition (APEC 2015) in Charlotte, NC, USA (15-19 March), Infineon Technologies AG of Munich, Germany has announced the expansion of its gallium nitride (GaN)-on-silicon technology ...
Tags: Evatec Sputtering, PVD, Electronics
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching transistors based on its proprietary Island Technology for power conversion and control applications, has announced new top-side ...
Tags: GaN Systems, Power electronics, Electronics
SAGE SatCom of San Diego, CA, USA (part of telecoms solutions provider REMEC Broadband Wireless), which provides compact Ka-band block up-converter (BUC) and transceiver solutions, is now shipping its high-power 20 watt linear Ka-band BUC ...
Tags: GaN, M&C, Electronics
At the 30th IEEE Applied Power Electronics Conference and Exposition (APEC 2015) in Charlotte, NC, USA (15-19 March), Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and provides gallium nitride-based power conversion ...
Tags: APEC 2015, GaN Power Devices
Texas Instruments Inc (TI) has introduced what it claims is the first 80V, 10A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, consisting of a high-frequency driver and two GaN FETs in a half-bridge ...
Tags: GaN FETs, transistor
After two tough years of stagnation, in 2014 the power semiconductor device market returned to growth, rising by 8.4% to $11.5bn, according to the report 'Status of the Power Electronics Industry (February 2015 edition)' from Yole ...