RFMD starts shipping power amplifiers for LTE version of Samsung's Galaxy S3 smartphone RF Micro Devices Inc of Greensboro,NC,USA has begun production shipments of power amplifiers(PAs)to Samsung in support of its next-generation Galaxy ...
IQE expects revenue growth in second-half 2012 following Q2 recovery According to an interim trading update for first-half 2012, epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK expects to report first-half revenue of ...
RFMD's quarterly revenue and margins grow,driven by diversified markets For its fiscal first-quarter 2013(to end-June 2012),RF Micro Devices Inc of Greensboro,NC,USA has reported revenue of$202.7m.This is down 5.4%on$214.2m a year ago but ...
Tags: RFMD, quarterly revenue, CPG, non-GAAP basis, power amplifiers
RF Micro Devices Inc of Greensboro,NC,USA has launched a new single-stage indium gallium phosphide heterojunction bipolar transistor(InGaP HBT)power amplifier(PA)operating at frequencies of 50-2700MHz,designed specifically for wireless ...
Tags: RFMD, InGaP HBT, power amplifier, wireless infrastructure
First production order comes from Solar Junction–in which the UK-headquartered wafer foundry has a$5M equity stake. Semiconductor wafer featuring multi-junction cells The advanced semiconductor epiwafer foundry IQE is to ...
Tags: IQE, Wafer Maker, CPV, Sharp
RF Micro Devices Inc of Greensboro,NC,USA says that its new RF5836 provides a complete integrated solution in a single front-end module(FEM)for WiFi 802.11a/n systems. The RF5836 integrates a 5GHz power amplifier(PA),single-pole ...
Tags: Front-End Module, Power Amplifier, Mobile Devices, Consumer Electronics
Silicon Valley-based Gaas Labs LLC,a private investment fund targeting the communications semiconductor market,has acquired privately held Nitronex Corp of Durham,NC,USA,which designs and makes gallium nitride(GaN)-based RF power ...
Tags: Gaas Labs, Nitronex, GaN-on-Si, RF power transistors, semiconducto
In booth 1210 at the 2012 IEEE MTT-S International Microwave Symposium (IMS) in Montreal, Canada (17-22 June), RF Micro Devices Inc of Greensboro, NC, USA has launched the RFVA0016 — a highly integrated broadband quarter-watt (1/4W) ...
Tags: RFMD, International, applications
18 June 2012 RFMD adds 280W GaN matched power transistor family,targeting pulsed-radar RF Micro Devices Inc of Greensboro,NC,USA has launched the RFHA1025,a highly efficient 280W pulsed gallium nitride(GaN)RF matched power transistor ...
Tags: RFMD, GaN, GaN power transistor, the RFHA1025, IMS, semiconductor
RF Micro Devices Inc of Greensboro,NC,USA has launched the RFVA0016,an integrated,analog-controlled,variable-gain amplifier(VGA)for broadband applications with external matching,allowing operation in all bands from 400MHz to 2700MHz with a ...
Tags: RFMD, VGA, Broadband Applications
RF Micro Devices Inc of Greensboro,NC,USA says that its Foundry Services business unit has updated its process design kits(PDKs)for use with Agilent Technologies Inc's Advanced Design System(ADS)2011 electronic design ...
In booth 1210 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),RF Micro Devices Inc of Greensboro,NC,USA is showcasing its broad portfolio of products and technologies for the wireless and wired ...
In booth 1210 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),RF Micro Devices Inc of Greensboro,NC,USA has launched four RF front-end modules(FEMs)for next-generation WiFi applications.The ...
Tags: RFMD, WiFi, FEM, IMS, WiFi applications
RF Micro Devices Inc of Greensboro,NC,USA has launched the RFPA1012 linear power amplifier,designed specifically for wireless infrastructure applications. Using a gallium arsenide(GaAs)heterojunction bipolar transistor(HBT)fabrication ...
Epiwafer foundry and substrate maker IQE plc of Cardiff,Wales,UK has completed its acquisition(announced on 5 June)of the entire in-house molecular beam epitaxy(MBE)epiwafer manufacturing unit of RF Micro Devices Inc of ...