Germany-based researchers claim a record on-current for an enhancement-mode (e-mode) gallium nitride (GaN) metal insulator semiconductor heterostructure field-effect transistor (MISHFET) on silicon (Si) substrate [Herwig Hahn et al, Jpn. J. ...
Tags: Electrical, Electronics, E-Mode
Peking and Xidian universities have jointly developed a self-terminating gate recess etch that allows them to produce aluminium gallium nitride (AlGaN) normally-off metal-oxide-semiconductor field-effect transistors (MOSFETs) with positive ...
Tags: Electrical, gate recess etch
Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA has entered into a settlement agreement with El Segundo-based Efficient Power Conversion Corp (EPC) - which makes enhancement-mode gallium nitride on ...
Tags: Electrical, Electronics, semiconductor, Power semiconductor
China-based researchers have reported that country's first diamond metal-semiconductor field-effect transistors (MESFETs) with RF characteristics [Feng ZhiHong et al, Science China Technological Sciences, vol56, p957, 2013]. The team was ...
Tags: Diamond MESFET MESFET Diamond, Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) used in power management applications, has redesigned its website to include ...
Tags: EPC, Electrical, Electronics
Funded by the US Army Research Office, researchers at North Carolina State University ( at the atomic scale (just one atom thick). The technique can be used to create the thin films on a large scale, sufficient to coat wafers that are ...
Tags: NCSU, Atomic-Layer Thin-Film
The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial ...
Energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives, the emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA says that its EPC9005 development board featuring the firm’s 40V EPC2014 enhancement-mode gallium nitride (eGaN) field-effect transistors (FETs) – as launched in ...
Tags: Power Conversion, GaN devices
Researchers at Purdue and Harvard universities have developed gallium arsenide (GaAs) enhancement-mode (E-mode) surface/n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with a maximum drain current of 336mA/mm, which ...
Tags: NMOSFETs, GaAs, GaAs transistor ALE
OPEL Technologies Inc of Toronto, Ontario, Canada – which develops III-V semiconductor devices and processes through US affiliate OPEL Defense Integrated Systems (ODIS Inc) of Storrs, CT – says that it has achieved Milestone 4 ...
Tags: OPEL, semiconductor devices, semiconductor
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) used in power management applications, will be presenting an educational ...
Tags: EPC, eGaN Technology, APEC
Researchers based in South Korea and France have developed gallium nitride (GaN) fin field-effect transistors (FinFETs) with the lowest claimed subthreshold swing for nitride semiconductor metal-insulator-semiconductor FETs (MISFETs) ...
The inverter market grew significantly to $45bn in 2012, and will reach $71bn by 2020, according to Yole Développement in a report on ‘Inverter market trends for 2013-2020 and major technology changes’. “More than ...
A team at Massachusetts Institute of Technology has developed an etch stop technique to improve performance of recessed-gate nitride semiconductor metal-insulator-semiconductor field-effect transistors (MISFETs) [Bin Lu et al, IEEE Electron ...
Tags: GaN MISFET GaN MOCVD, Electronics, Etch