Based on common aluminum electrolyticA polarized capacitor exhibiting a very high capacitanceThat property of a system of conductors and dielectrics which permits the storage of electricity when potential difference exists between the ...
Tags: Panasonic, Polymer, Polymer Al E-Caps
Driven by the fanfare over (and over-estimation of) the LCD display market, the LED front-end equipment market experienced an unprecedented investment cycle in 2010-2011, driven mostly by metal-organic chemical vapor deposition (MOCVD) ...
Tags: LED, Electrical, Electronics
The market surge was driven mostly by MOCVD reactor shipments to new Chinese entrants, who benefited from the generous subsidies of the Chinese central and local governments in a bid to stimulate domestic chip production. Financial ...
SemiTEq of Saint-Petersburg, Russia, which designs and manufactures high-vacuum and ultra-high-vacuum (UHV) equipment including molecular beam epitaxy (MBE) deposition systems, has launched a new generation of physical vapor deposition ...
Tags: PVD PECVD Etch MBE, Electrical, Electronics
KEMET Corporation (NYSE: KEM), a leading global supplier of electronic components, introduced its next-generation aluminum electrolyticA polarized capacitor exhibiting a very high capacitanceThat property of a system of conductors and ...
Tags: electronic components, Electrical, Electronics, LED
Sun Yat-sen University in China has improved the wall-plug efficiency of indium gallium nitride (InGaN) light-emitting diodes (LEDs) grown on silicon by incorporating a distributed Bragg reflector (DBR) [Yibin Yang et al, Appl. Phys. ...
Tags: InGaN LEDs, Silicon, semiconductor
Featuring a dual safetyClass X capacitors are used in "across-the-line" applications where their failure would not lead to electric shock. Class X safety caps are used between the "live" wires carrying the incoming AC current. In this ...
Tags: Electrical, Electronics
Researchers in France have developed a technique to directly grow graphene on aluminium nitride (AlN) crystalline templates on silicon substrates [A. Michon et al, Appl. Phys. Lett., vol104, p071912, 2014]. Up to now, attempts to use ...
Tags: Electrical, Electronics
Lund University has developed multi-gate (MuG) III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) with a cut-off frequency of 210GHz and a maximum oscillation frequency of 250GHz, “the highest of any reported ...
Tags: effect transistors, fins, plasma, Electrical&Electronics
Henkel will exhibit lubricants and cleaners under the Bonderite brand for the manufacture of two-piece beverage cans at Metpack 2014, a trade fair for the international metal packaging industry, scheduled between 6 May and 8 May 2014. The ...
Tags: Henkel, Beverage Cans
About 18 months ago, I wrote about an MIT project in which computer models demonstrated that graphene could act as a filter in the desalination of water through the reverse osmosis (RO) method. RO is slightly less energy intensive than the ...
Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France and EpiGaN nv in Belgium have claimed a record combination of specific on-resistance and breakdown voltage for a double heterostructure field-effect transistor ...
Researchers associated with Taiwan National Central University and Epistar Corp are developing a method to transfer indium gallium nitride (InGaN) light-emitting diodes (LEDs) to ceramic aluminium nitride (AlN) substrates for high-voltage ...
Tags: InGaN LED, Ceramic Substrate
University of Notre Dame (UND) is developing gallium nitride (GaN) quantum dots in aluminium nitride (AlN) as a route to deep ultraviolet (UV) light-emitting diodes (LEDs) [Jai Verma et al, Appl. Phys. Lett., v104, p021105, 2014]. ...
Tags: UV Light Emission, LEDs
Using electrons more like photons could provide the foundation for a new type of electronic device that would capitalize on the ability of graphene to carry electrons with almost no resistance even at room temperature – a property ...