Researchers based in China and Canada have developed single-mode ridge waveguide Fabry-Perot (RW FP) laser diodes using a pair of etched trenches that are slanted to reflect out unwanted wavelengths [Xun Li et al, Appl. Phys. Lett., vol107, ...
Tags: laser diodes, packages
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is displaying its new GS66540C 650V 100A high-current GaN power ...
In booth C309 (Hall Ternes) at European Microwave Week (EuMW 2015) in Paris, France (6-11 September), Infineon Technologies AG of Munich, Germany has introduced its first devices in a family of gallium nitride on silicon carbide ...
Tags: EuMW 2015, GaN-on-silicon, GaN-on-SiC, PA
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has announced that the MAGX-100027-100C0P, a wideband ...
At European Microwave Week (EuMW 2015) in Paris, France (8–10 September), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and ...
Analog Devices Inc (ADI) of Norwood, MA, USA (which provides ICs for analog and digital signal processing applications) has launched a medium-power distributed driver amplifier that operates at 24-35GHz, suitable for civil and defense ...
Tags: Analog Devices, driver amplifier
University of Glasgow and University of Cambridge in the UK have claimed the highest frequency performance to date for gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on low-resistivity (LR) silicon (Si) [A. Eblabla et al, ...
Global shipments of LCD TV panels in the third quarter are expected to remain on par to the previous quarter's, thanks to TV vendors' increased parts procurements; but are forecast to drop by 10 percent quarter-on-quarter (QoQ) in the ...
Tags: LCD TV panels, LCD TV
A multi-disciplinary research team led by Young Hee Lee, director of South Korea's Institute for Basic Science (IBS) Center for Integrated Nanostructure Physics at Sungkyunkwan University (SKKU), has devised a fabrication method for the ...
Tags: semiconductor, electronic products, transition-metal dichalcogenide
Researchers in the USA and Korea have developed a hydrogen high pressure annealing (HPA) process for aluminium oxide/hafnium dioxide (Al2O3/HfO2) gate stacks on indium gallium arsenide (InGaAs) quantum wells [Tae-Woo Kim et al, IEEE ...
Tags: Transistors, capacitors
The global gallium nitride (GaN) industrial devices market is rising at a compound annual growth rate (CAGR) of 15.1% from $481.8m in 2014 to $1315m in 2021, forecasts Transparency Market Research in its report 'GaN Industrial Devices ...
Tags: industrial devices, LED devices
According to the report 'GaN and SiC for power electronics applications' from Yole Développement, in 2014 the silicon carbide (SiC) chip business was worth more than $133m, with power factor correction (PFC) and photovoltaics (PV) ...
Tags: SiC Market, power electronics
Analog Devices Inc (ADI) of Norwood, MA, USA (which provides ICs for analog and digital signal processing applications) has launched the HMC1127 and HMC1126 MMIC (monolithic microwave integrated circuit) distributed power amplifiers, based ...
Tags: electronics, semiconductor, Analog Devices, MMIC pHEMT
Through its Milpitas, California-based Isolink subsidiary, Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) has launched a low-loss, high-performance wideband DC-6GHz hermetic gallium ...
Tags: electronic components, semiconductor, Skyworks RF switches
X-FAB Silicon Foundries AG of Erfurt, Germany - an analog/mixed-signal and micro-electro-mechanical systems (MEMS) foundry - has announced what it claims is the first cost-efficient 180nm silicon-on-insulator (SOI) technology for automotive ...
Tags: X-FAB, SOI, electrical components