4 June 2012 Cree launches X-band fully matched 50-100W GaN HEMTs for commercial radar and satcoms Cree Inc of Durham,NC,USA has launched high-efficiency X-band,fully matched gallium nitride(GaN)high-electron-mobility transistors(HEMTs)for ...
Tags: Cree Inc, GaN HEMTs, high-efficiency X-band, semiconductor, IEEE
A little bit of semiconductor magic made a lot of difference to RF power amplifiers,and looks like it will do the same for mains PSUs. That magic is the'two-dimensional electron gas'that forms between layers in certain semiconductor ...
Tags: GaN, semiconductor, RF power amplifiers, GaAs, SiC, PSU, JFET
''Gallium nitride power transistors are poised to move out of the labs and into mains PSUs and motor drives,'' was one message from the PCIM power show in Nuremberg this month. ''Only if the price drops and designers can bear the ...
Tags: Gan, Silicon, transistors
11 May 2012 Record transconductance of 1105mS/mm for GaN/InAlN MIS-HFET University of California Santa Barbara(UCSB)has produced gate-first self-aligned metal-insulator-semiconductor heterostructure field-effect ...
Tags: GaN/InAlN, MIS-HFET, UCSB, semiconductor material
Recently, AIXTRON has supplied its new AIXTRON AIX G5 HT MOCVD reactor to Infineon Technologies for the development of GaN-on-Si power HEMTs. In September 2011, Infineon Technologies confirmed process acceptance of the system in a 8x6-inch ...
Tags: Market View, mocvd
Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that its customer Infineon Technologies AG has reached the first stage in its plans to evaluate gallium nitride on silicon (GaN-on-Si) power HEMTs (high-electron-mobility ...
Tags: mocvd
Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that its customer Infineon Technologies AG has reached the first stage in its plans to evaluate gallium nitride on silicon (GaN-on-Si) power HEMTs (high-electron-mobility ...
Tags: Market View, mocvd