Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that, in continuing with its reorganization (as part of its 5-Point Program to return to sustainable profitability, launched in May 2013), it plans to cut ...
Tags: organic light-emitting diodes, gallium nitride, Electrical
Researchers at Chinese Academy of Sciences’ Institute of Semiconductors have achieved a 42% enhancement in light output from flip-chip indium gallium nitride (InGaN) light-emitting diodes (LEDs) by incorporating a photonic crystal ...
Tags: photonic crystal(PHC)structure, light-emitting diodes, Electrical
Rensselaer Polytechnic Institute in the USA has developed nitride semiconductor solar cells with high quantum efficiency for short wavelengths (370-450nm) and concentrated photovoltaics at temperatures up to 400°C [Liang Zhao et al, ...
Tags: PV Performance, Electrical
Researchers in Germany have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on silicon carbide (SiC) layers on silicon wafers [Wael Jatal et al, IEEE Electron Device Letters, published online 11 December 2014]. ...
Tags: Cubic Silicon Carbide, Electrical
China’s Xidian University has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, ...
Tags: HEMTs, InGaN channels
The Optical Society (OSA) and the IEEE Photonics Society have named Paul Daniel Dapkus, the W. M. Keck Distinguished Professor of Engineering at the University of Southern California (USC), as recipient of the 2015 John Tyndall Award for ...
Tags: metal-organic chemical, Electrical
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that Xiamen-based Sanan Optoelectronics Co Ltd, China’s largest LED maker, has ordered 50 TurboDisc EPIK700 gallium nitride (GaN) ...
Tags: LED maker, process equipment, Electrical
Anvil Semiconductors Ltd of Coventry, UK and the Cambridge Centre for GaN (part of University of Cambridge’s Department of Materials Science and Metallurgy) have grown cubic GaN on 3C-SiC on silicon wafers by metal-organic chemical ...
Tags: green LEDs, silicon wafers, Electrical
NTT Basic Research Laboratories in Japan has used a hexagonal boron nitride (h-BN) layer to release and transfer gallium nitride (GaN) high-electron-mobility transistors (HEMTs) from sapphire substrate to thermally conducting copper, ...
Tags: Boron Nitride, GaN Transistors
At the 11th China International Forum on Solid State Lighting (SSL CHINA 2014) in Guangzhou (6-8 November) – where representatives from industry, research and governmental organizations gathered to discuss recent developments and ...
Tags: Mocvd Technology, Electrical
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has introduced the Propel Power gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) system, which incorporates single-wafer ...
Researchers based in China have found “remarkably reduced efficiency droop” from staircase (SC) thin indium gallium nitride (InGaN) quantum barrier (QB) light-emitting diodes (LEDs) [Kun Zhou et al, Appl. Phys. Lett., vol105, ...
Tags: High Current, remarkably reduced efficiency droop, Electrical
University of California Santa Barbara (UCSB) and Mitsubishi Chemical Corp have reported indium gallium nitride (InGaN) light-emitting diodes (LEDs) with thicker active regions enabled by growing the crystal on the semi-polar (30-3-1) plane ...
At the 11th China International Forum on Solid State Lighting (SSL CHINA 2014) in Guangzhou (6-8 November), deposition equipment maker Aixtron SE of Aachen, Germany has received the ‘Award of Outstanding Achievement for Global SSL ...
For the third-quarter 2014, epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported revenue of $93.3m, down on $99.3m a year ago and $95.1m last quarter (and below the mid-point of the ...
Tags: Veeco, MOCVD Revenue, LED segment