Barrier Diodes articles & resources on Made-in-China.com

Toshiba Adds Second-Generation 650V SiC Schottky Barrier Diodes in DPAK Surface-Mount Package

Oct 24, 2017

Toshiba Electronic Devices & Storage Corp (TDSC) - spun off from Toshiba Corp in July - has enhanced its diode portfolio with the addition of six Schottky barrier diodes (SBDs) fabricated with silicon carbide (SiC) and housed in ...

Tags: Toshiba, Schottky Barrier, Package

Aluminium Nitride Schottky Barrier Diodes with Breakdown More Than 1kv

Aug 3, 2017

Arizona State University (ASU) in the USA claims the first demonstration of 1kV-class aluminium nitride (AlN) Schottky barrier diodes (SBDs) [Houqiang Fu et al, IEEE Electron Device Letters, 5 July 2017]. AlN has a wide bandgap of 6.2eV. ...

Tags: semiconductor, MOCVD

Rohm Expands Full-SiC Power Module Lineup

May 23, 2017

Japan’s ROHM Semiconductor has developed 1200V 400A/600A-rated full-silicon carbide (SiC) power modules [BSM400D12P3G002/BSM600D12P3G001] - available in June (for samples and OEM quantities) - optimized for inverters and converters in ...

Tags: power modules, Semiconductor

Rohm Showcasing New Third-Generation 650V SiC Schottkys and 1200V/180A Full-SiC Modules at PCIM

Apr 21, 2016

In hall 9, booth 316 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremberg, Germany (10-12 May), Japan's Rohm Semiconductor is showcasing its latest power products for high-speed switching and high-power performance, while ...

Tags: Rohm SiC Schottky barrier diodes SiC power MOSFET

Vertical Gallium Nitride Schottky Diode Combining High Current/Breakdown

Apr 8, 2016

HRL Laboratories LLC in the USA has developed a gallium nitride (GaN) vertical tunneling Schottky barrier diode (TBS) that gives good combined on and off performance, compared with vertical Schottky barrier diodes (SBDs) [Y. Cao et al, ...

Claiming Record 4.7kv Breakdown for Gallium Nitride P-N Diodes

Oct 15, 2015

Researchers in Japan have claimed record breakdown voltage combined with low on-resistance for vertical gallium nitride (GaN) p-n diodes fabricated on free-standing GaN substrates [Hiroshi Ohta et al, IEEE Electron Device Letters, published ...

Tags: GaN p-n diodes, GaN Free-standing, GaN substrates

Toyoda Gosei Developed Vertical GaN SBDs Capable

Jul 13, 2015

Japan's Toyoda Gosei Co Ltd has developed vertical gallium nitride (GaN) Schottky barrier diodes (SBDs) capable of handling 50A forward current with 790V reverse blocking [Nariaka Tanaka et al, Appl. Phys. Express, vol8, p071001, 2014]. "To ...

Tags: Vertical Schottky barrier, power supply, diodes Free standing

Japan's Rohm Started Mass Production of Silicon Carbide Mosfet

Jun 9, 2015

Japan's Rohm Co Ltd has started mass production of what it claims is the first silicon carbide (SiC) MOSFET (metal-oxide-semiconductor field-effect transistor) with a trench structure (where the gate is formed on the sidewall of a groove in ...

Tags: ROHM Semiconductor SiC power MOSFET, Sic Mosfet

Researchers Claimed Record High Breakdown Voltage for Aluminium Gallium Nitride

Mar 26, 2015

Researchers at University of Notre Dame (UND) in the USA have claimed record high breakdown voltage for aluminium gallium nitride (AlGaN/GaN) lateral Schottky barrier diodes (SBDs) on silicon [Mingda Zhu et al, IEEE Electron Device Letters, ...

Tags: silicon diodes, GaN substrates

Raytheon Develops MOSFET for Use in Electric, Hybrid-Electric and So on

Dec 1, 2014

Raytheon UK’s semiconductor business unit in Glenrothes, Scotland, UK has been selected by a “leading automotive manufacturer” to develop a silicon carbide (SiC)-based metal-oxide-semiconductor field-effect transistor ...

Tags: hybrid electric vehicles, semiconductor, Electrical

Mitsubishi Electric Launched a Transfer-Molded Super-Mini DIPPFC Module

Aug 20, 2014

Tokyo-based Mitsubishi Electric Corp has launched a transfer-molded super-mini dual in-line package power factor correction (DIPPFC) module incorporating silicon carbide (SiC) transistors and diodes that is expected to help reduce the power ...

Tags: Mitsubishi Electric, SiC power modules

Toshiba Corp's Expanded Its Family of 650V Silicon Carbide Schottky Barrier Diodes

Jun 4, 2014

Toshiba Corp’s Semiconductor & Storage Products Company has expanded its family of 650V silicon carbide (SiC) Schottky barrier diodes (SBDs) with the addition of insulated TO-220F-2L packaged products. Mass production shipment has ...

Tags: Toshiba, Semiconductor, Storage Products

Toshiba Is Expanding Its Family of 650V SiC Schottky Barrier Diodes

Oct 28, 2013

With analysts predicting significant growth in the silicon carbide (SiC) power device market, in order to meet an anticipated spike in demand Japan’s Toshiba is expanding its family of 650V SiC Schottky barrier diodes (SBD). The ...

Tags: Toshiba, SiC Schottky

Toshiba Expanded Its Family of 650V Silicon Carbide Schottky Barrier Diodes

Sep 20, 2013

Tokyo-based Toshiba Corp has expanded its family of 650V silicon carbide (SiC) Schottky barrier diodes (SBD) with the addition of a 10A product to its existing line-up of 6A, 8A and 12A products (which operate with a forward voltage of 1.7V ...

Tags: Toshiba, Electrical, Electronics

Device Isolation Was Achieved by Nitrogen Implantation

Aug 12, 2013

Researchers based in Belgium have developed gold-free nitride semiconductor Schottky barrier diodes (SBDs) on 200mm-diameter silicon to complement metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) previously ...

Tags: Barrier Diodes, Electrical, Electronics

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