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Digi Key
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Rayvio Shipping New XD MID-Power and High-Power Xr Series UV-C LEDs
Sep 10, 2018Health and hygiene company RayVio Corp of Haywood, CA, USA, which is commercializing deep-ultraviolet (UV) LEDs and consumer disinfection solutions, is volume shipping its new 280nm XD mid-power and XR high-power UV-C LEDs, and has ...
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EPC Launches High-Efficiency Half-Bridge Development Board Operating up to 10MHz for Point-of-Load DC-DC Conversion
Oct 20, 2017Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – has made available the ...
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Peregrine's New PE29102 FET Driver Brings Fastest Switching Speeds to GaN Class-D Audio
Oct 18, 2017Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched the UltraCMOS PE29102 high-speed FET driver. With a ...
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EPC Launches Wireless Power Demonstration Kits
Oct 10, 2017Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA - which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications - has announced the availability of two ...
Tags: EPC, Wireless Power Demonstration
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Nitride Semiconductor Files UV-LED Patent Infringement Lawsuit in USA Against Digi-Key
Sep 26, 2017Nitride Semiconductor Co Ltd of Tokushima, Japan has filed a patent infringement lawsuit with the US District Court for the District of Minnesota against Digi-Key Corp (trading as Digi-Key Electronics), which sells ultraviolet ...
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EPC Launches Class 4 Airfuel-Compliant Wireless Power Demonstration Kit Transmitting up to 33W
Aug 14, 2017Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the availability of a ...
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EPC Launches GaN Half-Bridge Enabling 12V to 1.8V System Efficiency Over 85% at 5MHz at 14A Output
Jun 2, 2017Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the EPC2111, a 30V ...
Tags: transistors, GaN transistor
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EPC Offers 15MHz Half-Bridge Development Boards Using eGaN FET Synchronous Bootstrap Augmented Gate Drive
Apr 5, 2016Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has made available the EPC9066, EPC9067 ...
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EPC Launches 100W, 92%-Efficient eGaN FET Development Board for 6.78MHz Airfuel Wireless Power Standard
Feb 18, 2016Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC9065, a development ...
Tags: Wireless Power, EPC
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Marktech Launches High-Power 950nm Emitters for Optical Switches, Sensors and Scanners
Dec 21, 2015Visible and infrared LED sensor product maker Marktech Optoelectronics of Latham, NY, USA, whose capabilities span wafer growth through finished packaging and custom solutions, has introduced the latest in its series of high-power 950nm LED ...
Tags: Marktech Optoelectronics, Optimized for optical switches and sensors
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EPC Publishes Second Edition of Wireless Power Handbook
Dec 16, 2015Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced publication of the second ...
Tags: EPC, E-mode GaN FETs
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Wolfspeed Launches 50V Plastic-Packaged GaN HEMTs for LTE & Radar
Oct 15, 2015Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two plastic-packaged ...
Tags: Wolfspeed, high-electron-mobility transistors, GaN HEMT devices
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Digi-Key Announced an Agreement with US-Based Digi-Key Electronics
Apr 21, 2015As part of its growth strategy to reach a broader set of customers, Global Power Technologies Group (GPTG) has announced an exclusive global distribution agreement with US-based Digi-Key Electronics, a provider of both prototype/design and ...
Tags: SiC Products, Electronics
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EPC Introduces Wide-Pitch eGaN FETs Enabling High Current
Apr 15, 2015Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced an eGaN FET designed with a ...
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EPC Introduced The EPC9115 with an Input Range of 48V to 60V
Mar 24, 2015Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the EPC9115, a ...
Tags: EPC, DC-DC converter, Electronics
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