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FETs
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TI Expands GaN Power Portfolio with Smallest and Fastest GaN FET Drivers
Mar 7, 2018Expanding on its gallium nitride (GaN) power portfolio, Texas Instruments Inc (TI) has launched two high-speed GaN field-effect transistor (FET) drivers to create more efficient, higher-performing designs in speed-critical applications such ...
Tags: GaN Power, GaN FET Drivers
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EPC Launches High-Efficiency Half-Bridge Development Board Operating up to 10MHz for Point-of-Load DC-DC Conversion
Oct 20, 2017Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – has made available the ...
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Peregrine's New PE29102 FET Driver Brings Fastest Switching Speeds to GaN Class-D Audio
Oct 18, 2017Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched the UltraCMOS PE29102 high-speed FET driver. With a ...
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EPC Launches Wireless Power Demonstration Kits
Oct 10, 2017Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA - which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications - has announced the availability of two ...
Tags: EPC, Wireless Power Demonstration
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Navitas' GaN Power Ics Enable Smallest 65W USB-PD Laptop Adapter
Sep 21, 2017To keep pace with the dramatic size and weight reductions in laptop designs over the last 10 years, Navitas Semiconductor Inc of El Segundo, CA, USA has launched what it claims is the smallest 65W USB-PD (Type C) adapter reference design. ...
Tags: GaN Power, Laptop Adapter
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Navitas Chosen by Poweramerica to Enable High-Efficiency, High-Density Mobile Fast Chargers
Sep 4, 2017PowerAmerica — a manufacturing institute consisting of public and private partners from the semiconductor industry, the US Department of Energy (DoE), national laboratories and academia — in early August selected Navitas ...
Tags: PowerAmerica, Fast Chargers
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EPC Launches Class 4 Airfuel-Compliant Wireless Power Demonstration Kit Transmitting up to 33W
Aug 14, 2017Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the availability of a ...
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TI Launches High-Voltage, Three-Phase High-PWM-Frequency GaN Inverter Reference Design for 200V AC Servo Drives and Robotics
Jun 29, 2017Texas Instruments Inc (TI) has launched a three-phase, gallium nitride (GaN)-based inverter reference design that helps engineers build 200V, 2kW AC servo motor drives and next-generation industrial robotics with fast current-loop control, ...
Tags: GaN Inverter, AC Servo Drives
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Imec Demos First Sub-10nm Germanium Gate-All-Around FETs
Jun 16, 2017At the 2017 Symposia on VLSI Technology and Circuits in Kyoto, Japan (5-8 June), nanoelectronics and photovoltaics research centre Imec of Leuven, Belgium unveiled new process improvements for next-generation devices. For the first time it ...
Tags: Imec, transistors
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EPC Launches GaN Half-Bridge Enabling 12V to 1.8V System Efficiency Over 85% at 5MHz at 14A Output
Jun 2, 2017Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the EPC2111, a 30V ...
Tags: transistors, GaN transistor
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PowerAmerica Funding Speeds Transphorm's Development of 900V GaN HEMT Product
Apr 25, 2017Due to funding assistance from PowerAmerica – a private-public partnership between the US Department of Energy, industry and academia – Transphorm Inc of Goleta, near Santa Barbara, CA, USA, which designs and manufactures what ...
Tags: PowerAmerica, GaN products
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EPC Issues Ninth Reliability Report
Apr 14, 2017Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced its Phase Nine Reliability ...
Tags: gallium nitride, FETs
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Reducing Subthreshold Swing of Gallium Arsenide Transistors
Sep 28, 2016Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...
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Telcodium Partners with Transphorm on First Redundant Power Supplies Using GaN Fets
Sep 20, 2016Power supply design firm Telcodium of Boucherville, QC, Canada, in collaboration with Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC-qualified 650V gallium nitride (GaN)-based devices for ...
Tags: Telcodium, Transphorm, GaN FETs
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MACOM Showcasing Dc-100ghz MMICs atEuMW
Sep 9, 2016In booth #207 at European Microwave Week (EuMW 2016) at ExCel London, UK (4–6 October), MACOM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, ...
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