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Fujitsu Laboratories Developed Compact Gallium Nitride HEMT
Jun 14, 2013Fujitsu Laboratories of Kawasaki, Japan has developed compact gallium nitride high-electron-mobility transistor (HEMT)-based transceiver module technology with an output of 10W operating at frequencies up to the millimeter-wave band. ...
Tags: Fujitsu GaN HEMT, Electrical, Electronics