Two teams at the US National Aeronautics and Space Administration (NASA) Goddard Space Flight Center in Greenbelt, MD, USA are being funded to investigate the use of gallium nitride (GaN) to enhance space exploration. Engineer Jean-Marie ...
Tags: GaN transistors, GaN Crystal
Seren Photonics Limited, based near Cardiff, Wales, UK, a developer of semipolar gallium nitride and BluGlass Limited of Silverwater, Australia, a developer of semiconductor manufacturing process and equipment have announced the completion ...
Tags: Seren Photonics, LED
Osaka University in Japan has developed a liquid phase epitaxy (LPE) process for the growth of gallium nitride (GaN) in a sodium (Na) flux with a small amount of carbon (C) that, with the addition of lithium (Li) and gallium, can also be ...
Toyoda Gosei Co Ltd of Kiyosu, Aichi Prefecture, Japan has developed what is claimed to be the first 1.2kV-class power semiconductor device chip capable of large-current operation exceeding 20A. Picture: Forward current–voltage ...
Ammono S.A. in Warsaw, Poland, which produces bulk gallium nitride (GaN) using ammonothermal technology, and the Institute of High Pressure Physics of the Polish Academy of Sciences (Unipress) say they have conceived proprietary new ...
Ammono S.A. of Warsaw, Poland, which produces bulk gallium nitride (GaN) using ammonothermal technology, has announced that it is partnering with Kyma Technologies Inc of Raleigh, NC, USA and MicroLink Devices of Niles, IL, USA in two novel ...
Tags: efficiency of power electronics, semiconductor materials
LED forecast plays down GaN-on-silicon impact 23 Jul 2013 Sapphire is set to remain the entrenched wafer technology for solid-state lighting, say analysts at Lux Research. Despite the transition of LED-based solid-state lighting (SSL) ...
Seoul National University and Ritsumeikan University in Korea have developed a new technique for growing higher-quality gallium nitride (GaN) layers at temperatures as low as 500°C [In-Su Shin et al, Appl. Phys. Express, vol5, p125503, ...
Tags: Lights, Instruments, Meters
Seoul Semiconductor claims 5x brightness with non-polar LEDs 10 Jul 2012 Seoul Semiconductor has announced that it will introduce LEDs based on non-polar technology,which it claims will deliver over 5x the lumens per unit area of ...
Kyma's GaN crystal growth system is based on the hydride vapor phase epitaxy(HVPE)growth process which is a proven high growth rate approach for producing high purity crystalline compound semiconductor materials including GaN,GaAs,InP,and ...
Tags: Metallurgy, Crystal, Materials
Kyma Technologies has tapped into the market for GaN crystal growth equipment. The firm's GaN crystal growth system is based on the hydride vapour phase epitaxy(HVPE)growth process which is a proven high growth rate approach for producing ...
Tags: Kyma Technologies, GaN, crystal growth equipment, HVPE
Kyma Technologies Inc of Raleigh,NC,USA,which provides crystalline gallium nitride(GaN),aluminum nitride(AlN)and aluminum gallium nitride(AlGaN)materials and related products and services,is to enter the GaN crystal growth equipment ...
Semiconductor and MEMS giant aims to integrate video-sharing devices within smart phones and laptops. Projector phone:Samsung's Galaxy Beam Swiss-headquartered STMicroelectronics,rated as the world's leading maker of ...
Tags: ST, bTendo, STMicroelectronics, smart phones, laptop
22 June 2012 Sumitomo and Sony claim first 100mW true-green 530nm laser diode Tokyo-based compound semiconductor materials provider Sumitomo Electric Industries Ltd(SEI)and Sony Corp say that,by using a semi-polar gallium ...
Tags: laser diode, GaN substrate, semiconductor materials provider, SEI
20 June 2012 Mitsubishi develops 170W,70%-efficiency GaN-on-Si PA for base-station transmitters Picture:Mitsubishi Electric's 170W,2.1GHz GaN-on-Si power amplifier. Tokyo-based Mitsubishi Electric Corp has developed a prototype 2GHz ...
Tags: Mitsubishi Electric Corp, GaN-on-Si PA, base-station transmitters