GaN MBE Veeco

UCSB And NTU Have Been Optimizing Ammonia-Based MBE for GaN Growth
Jun 13, 2014
University of California Santa Barbara (UCSB) and National Taiwan University (NTU) have been optimizing ammonia-based molecular beam epitaxy (MBE) for gallium nitride (GaN) growth on a range of substrates [Erin C. H. Kyle et al, J. Appl. ...

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