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GaN on SiC Devices
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Wolfspeed's GaN RF Devices Demonstrate Reliability for Harsh Space Environments
Apr 15, 2016Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that its GaN-on-SiC RF power transistors have completed testing ...
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GaN RF Device Market to Grow at 14% CAGR, Rising by 2.5x by End-2022
Mar 30, 2016Led by adoption across various market segments, the gallium nitride (GaN) RF device market will double over the next five years, reckons Yole Développement in its new report 'GaN RF Devices Market: Applications, Players, Technology, ...
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Wolfspeed Ships GaN RF Devices Surpassing 1.3GW Output While Maintaining FIT Rate Of 5-Per-Billion Device
Mar 16, 2016Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that, as of the end of 2015, it had shipped gallium nitride on ...
Tags: Wolfspeed, Research Triangle Park
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Infineon Introduces GaN Devices for Mobile Base Station Transmitters
Nov 5, 2015Infineon Technologies AG introduced its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors at this year's European Microwave Week. As part of Infineon’s industry-leading GaN portfoliothe ...
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Infineon Introduces GaN Devices for Mobile Base-Station Transmitters; Charts Path to 5G Cellular Infrastructure
Sep 15, 2015In booth C309 (Hall Ternes) at European Microwave Week (EuMW 2015) in Paris, France (6-11 September), Infineon Technologies AG of Munich, Germany has introduced its first devices in a family of gallium nitride on silicon carbide ...
Tags: EuMW 2015, GaN-on-silicon, GaN-on-SiC, PA
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Element Six Aims to Extend Its R&D LED to The Third Consecutive Year of High Growth
Jan 23, 2015Luxembourg-registered synthetic diamond materials firm Element Six (a member of the De Beers Family of Companies) says that its Technologies Group experienced more than 20% growth in 2014, marking its third consecutive year of high growth. ...
Tags: synthetic diamond solutions, emerging markets, Electrical
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Its Gallium Nitride (GaN)-on-Diamond Wafers Have Been Proven by Raytheon Company
May 15, 2014Luxembourg-registered synthetic diamond materials firm Element Six (a member of the De Beers Family of Companies) says that its gallium nitride (GaN)-on-diamond wafers have been proven by Raytheon Company to significantly outperform ...
Tags: GaN-on-Diamond Wafers, GaN-on-SiC
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ITI Has Developed Two Gallium Nitride on Silicon Carbide (GaN-on-SiC) Devices
Jun 5, 2013Integra Technologies Inc (ITI) of El Segundo, CA, USA, which makes high-power pulsed RF transistors, has developed two gallium nitride on silicon carbide (GaN-on-SiC) devices - the IGN1011M675 and the IGN1011M1200 - targeted at the L-band ...
Tags: GaN-on-SiC Devices, Integra
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