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Imec Integrates Indium Gallium Nitride Into Vertical Nand Memory Structure
Dec 21, 2015The imec research center in Belgium has integrated high-mobility indium gallium arsenide (InGaAs) channels into three-dimensional (3D) vertical NAND charge-trap flash memory structures. The research was reported at the International ...
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Engineers at Imec and IBM Have Independently Developed New Manufacturing Processes
Dec 23, 2013Engineers at Imec and IBM have independently developed new manufacturing processes for making the next decade's leading chips, they revealed late last year. These efforts will allow the marriage of silicon wafers and certain exotic ...
Tags: Electrical, Electronics
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IQE Presented a Joint Paper on a New Type of Transistor
Dec 17, 2013At the IEEE International Electron Devices Meeting (IEDM 2013) in Washington DC (9-11 December), epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK, Pennsylavania State University and the US Commerce Department's National ...
Tags: Low-Power Tunneling Transistor, Electrical, Electronics
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IEDM 2013 Was Fabricated with a Silicon Fin Replacement Process on 300mm Silicon Wafers
Dec 13, 2013At the IEEE International Electron Devices Meeting (IEDM 2013) in Washington D.C., USA (9-11 December), nanoelectronics research institute imec of Leuven, Belgium reported the first functional strained germanium (Ge) quantum-well channel ...
Tags: FinFETs III-V CMOS, Electrical, Electronics
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Iqe Are Presenting a Joint Paper on Developments
Dec 10, 2013At the IEEE International Electron Devices Meeting (IEDM 2013) in Washington DC (9-11 December), epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK, Pennsylavania State University and the US Commerce Department's National ...
Tags: IQE, Electrical, Electronics
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IEDM Issued a Call for Papers Seeking Original Work in Microelectronics Research
May 6, 2013The 59th annual IEEE International Electron Devices Meeting (IEDM) has issued a Call for Papers seeking original work in microelectronics research and development. The paper submission deadline is Monday, June 24, 2013 at 23:59 p.m. Pacific ...
Tags: Electrical, Electronics, IEDM
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MIT Have Presented The Shortest-Gate Working Transistors Yet Built Using III-V Channels
Dec 27, 2012Researchers at Massachusetts Institute of Technology (MIT) have presented the shortest-gate working transistors yet built using III-V channels [J. Lin et al, IEDM, session 32.1]. The metal-oxide-semiconductor field-effect transistors ...
Tags: transistors, MIT, metal oxide semiconductor
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IMEC Has Been Developing Germanium(GE)P-Channel Devices
Dec 25, 2012An international research team has been exploring the role of gate oxide border traps in devices being developed for future electronics.The researchers presented their results at the 2012 International Electron Devices Meeting[D.Lin et ...
Tags: international research team, role of gate oxide border traps
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Purdue and Harvard Universities Have Produced Stacked NW Transistors
Dec 25, 2012Purdue and Harvard universities have produced stacked nanowire (NW) transistors with increased drive current and maximum transconductance. The results were presented on Wednesday 12 December at the International Electron Devices Meeting ...
Tags: Christmas Tree, 4d Electronics, nanowire transistors, wrap-around gates
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Researchers Reported Surrounding-Gate Transistors (SGTs) Using Compound Semiconductor
Aug 14, 2012Researchers at Hokkaido University and Japan Science and Technology Agency—PRESTO have reported surrounding-gate transistors (SGTs) using compound semiconductor core–multishell (CMS) nanowire (NW) channels on silicon that ...
Tags: Nanowire, transistors, PRESTO