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InAs
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SWIR Camera Market to Grow at 7.1% Cagr Over 2018-2025
Apr 17, 2018The shortwave infrared (SWIR) camera market will increase at a compound annual growth rate (CAGR) of 7.1% during 2018-2025 (including linear cameras growing at 8.31%), according to a report from market research firm Esticast Research & ...
Tags: linear camera, camera
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Monolithic Electrically Injected Microdisk Lasers on Silicon
Aug 1, 2017Researchers in Russia claim “the first demonstration of an injection quantum well microdisk laser fabricated of III-V materials monolithically grown on silicon (001) substrate” [N. V. Kryzhanovskaya et al, Optics Express, vol. ...
Tags: silicon photonics, Lasers
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Continuous-Wave Room-Temperature Indium Arsenide Quantum Cascade Laser
Aug 30, 2016University of Montpellier in France claims the first continuous-wave (cw) operation at room temperature of a 15μm indium arsenide (InAs) quantum cascade laser (QCL) [Alexei N. Baranov et al, Optics Express, vol. 24, p18799, 2016]. "To ...
Tags: University of Montpellier, InAs, MBE
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Subwavelength Micro-Disk Lasers on Exact (001) Silicon Substrate
Jun 23, 2016Researchers in Hong Kong and USA have been working on producing optically pumped micro-disk lasers on exact (001) silicon [Yating Wan et al, Appl. Phys. Lett., vol108, p221101, 2016]. The team from Hong Kong University of Science and ...
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Gallium Arsenide on V-Groove Silicon Template for Photonics and Electronics
Apr 15, 2016Researchers in Hong Kong and USA have developed indium arsenide (InAs) quantum dot (QD) microdisk lasers directly integrated on silicon (Si) with performance comparable to the best reported for similar devices on gallium arsenide (GaAs) ...
Tags: InAs quantum dot microdisk lasers InAs GaAs substrates
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Noise And Aluminium Indium Arsenide Antimonide Avalanche Photodiodes
Mar 15, 2016The universities of Virginia and of Texas in the USA have been developing avalanche photodiodes (APDs) based on aluminium indium arsenide antimonide (AlInAsSb) alloys. Two papers from the group detail the implementation of a staircase ...
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Direct Growth Of III-V Quantum Dot Lasers On Silicon Substrate
Mar 15, 2016Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...
Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE
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University of Oklahoma Has Developed IC Lasers on InAs Substrates
Jul 17, 2015University of Oklahoma in the USA has developed interband cascade (IC) lasers on indium arsenide (InAs) substrates with low threshold and high-current operation [Lu Li et al, Appl. Phys. Lett., vol106, p251102, 2015]. The researchers claim ...
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University of Oklahoma Develops IC Lasers on InAs Substrates with Low Threshold
Jul 17, 2015University of Oklahoma in the USA has developed interband cascade (IC) lasers on indium arsenide (InAs) substrates with low threshold and high-current operation [Lu Li et al, Appl. Phys. Lett., vol106, p251102, 2015]. The researchers claim ...
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IBM Developed a Process for Growing Compound Semiconductor Crystals
Jun 12, 2015A team at IBM Research's Zurich Research Laboratory in Rüschlikon, Switzerland, with support from the firm's T. J. Watson Research Center in Yorktown Heights, New York, has developed what it says is a relatively simple, robust and ...
Tags: IBM III-Vs-on-Si, Electrical, Electronics, IBM
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K-Space Witnesses Q1 Sales up 34% Annually
Apr 7, 2015k-Space Associates Inc of Dexter, MI, USA (which supplies thin-film metrology tools for the semiconductor, compound semiconductor and solar markets) has reported revenue for its patented kSA BandiT wafer and film temperature monitoring ...
Tags: k-Space, Electronic Materials, Electrical
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Long-Wavelength Interband Cascade Lasers
Feb 27, 2015Researchers from Germany and the UK claim record long wavelengths of 7μmfor interband cascade lasers (ICLs) based on indium arsenide (InAs) heterostructures [Matthias Dallner et al, Appl. Phys. Lett., vol106, p041108, 2015]. Devices with ...
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IBM Is Investing $3bn Over The Next 5 Years to Push The Limits of Chip Technology
Aug 20, 2014IBM is investing $3bn over the next 5 years in two broad research and early-stage development programs to push the limits of chip technology needed to meet the emerging demands of cloud computing and ‘big data’ systems. The ...
Tags: IBM, Big-Data Systems
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The Research Promises to Help Deliver Higher Semiconductor Performance
Jun 11, 2014At the 2014 Symposium on VLSI Technology, University of California, Santa Barbara (UCSB) has reported what are claimed to be the highest-performing III-V metal-oxide semiconductor (MOS) field-effect transistors (FETs). The research ...
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IQE Plans to Help Develop 1.3μ M-Emitting Quantum DOT Lasers
Mar 12, 2014Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK says that its epitaxial wafer technology has been used in conjunction with the University of California Santa Barbara (UCSB) to help develop 1.3μm-emitting quantum dot ...
Tags: silicon technology, semiconductor devices, laser components