Infineon Technologies AG of Munich, Germany has signed a definitive agreement for the newly founded private company Neptune 6 Ltd to acquire its subsidiary manufacturing site IR Newport Ltd in Newport, Wales, UK. The deal is expected to ...
Even with the well-publicized consolidation of RF Micro Devices and TriQuint Semiconductor, Infineon's acquisition of International Rectifier (IR) and most-recently Wolfspeed, and NXP Semiconductors' acquisition of Freescale Semiconductor, ...
Tags: GaN, Micro Devices, Semiconductor
Infineon Technologies AG of Munich, Germany has entered into a definitive agreement to acquire the Wolfspeed Power & RF division of Cree Inc of Durham, NC, USA for $850m in cash (about €740m). The deal also includes the related silicon ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that, to support its accelerating ...
Tags: EPC, GaN, semiconductors
Infineon Technologies AG introduced its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors at this year's European Microwave Week. As part of Infineon’s industry-leading GaN portfoliothe ...
Infineon Technologies AG of Munich, Germany says that is the market leader in power semiconductors for the twelfth consecutive time. Following the firm's acquisition of International Rectifier at the beginning of 2015, Infineon has a market ...
Tags: power semiconductors, Electronics
In booth C309 (Hall Ternes) at European Microwave Week (EuMW 2015) in Paris, France (6-11 September), Infineon Technologies AG of Munich, Germany has introduced its first devices in a family of gallium nitride on silicon carbide ...
Tags: EuMW 2015, GaN-on-silicon, GaN-on-SiC, PA
Richard Eden, senior analyst (Power Semiconductors) at market research firm IHS Technology, attended the recent PCIM (Power Conversion Intelligent Motion) Europe 2015 tradeshow in Nuremberg, Germany (19-21 May), and in a Research Note has ...
Tags: GaN SiC, Power electronics
At the 30th IEEE Applied Power Electronics Conference & Exposition (APEC 2015) in Charlotte, NC, USA (15-19 March), Infineon Technologies AG of Munich, Germany has announced the expansion of its gallium nitride (GaN)-on-silicon technology ...
Tags: Evatec Sputtering, PVD, Electronics
After two tough years of stagnation, in 2014 the power semiconductor device market returned to growth, rising by 8.4% to $11.5bn, according to the report 'Status of the Power Electronics Industry (February 2015 edition)' from Yole ...
Infineon Technologies AG of Munich, Germany has completed its acquisition (announced on 20 August) of International Rectifier Corp (IR) of El Segundo, CA, USA, following the approval of all necessary regulatory authorities and International ...
Infineon Technologies AGannounced today the closing of the acquisition of International Rectifier. With effect from today, the El Segundo based company has become part of Infineon following the approval of all necessary regulatory ...
Tags: necessary regulatory authorities, power semiconductors, Lights
Magnetic components and assembly designer and manufacturer Precision Inc of Minneapolis, MN, USA has launched its gallium nitride (GaN)-ready magnetic capabilities. GaN-ready LLC transformers and PFC inductors are now available for ...
Some says “if it can be made on Silicon, it will be made on silicon”. Is that true for GaN too? And if so, can it be applied in all GaN-based applications: LED, power, RF and laser?… Yole Développement (Yole) ...
Tags: GaN-on-Si, Power Electronics
Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA is to showcase its latest power management solutions at PCIM (Power Conversion Intelligent Motion) Europe 2014 in the Nuremberg Exhibition Center, ...
Tags: International Rectifier GaN-on-silicon, semiconductor, Electrical