LDs articles & resources on Made-in-China.com

Lifestyle Delivery Systems Announces Delivery of Second Generation Packaging Equipment

Oct 9, 2017

Lifestyle Delivery Systems has delivered the second generation oral strip packaging equipment to LDS Scientific at the Adelanto facility. The oral strips packaging equipment was cleared through customs at Los Angeles International Airport ...

Tags: Lifestyle Delivery Systems, Packaging Equipment

Reducing Laser Diode Optical Leakage with Indium Gallium Nitride Waveguides

Sep 23, 2016

Institute of High Pressure Physics (IHPP) and TopGaN Ltd, both of Poland, have been jointly developing indium gallium nitride (InGaN) waveguide structures for use in blue laser diodes (LDs) [Grzegorz Muziol et al, Appl. Phys. Express, vol9, ...

Tags: IHPP, TopGaN, InGaN, LDs

Indium Gallium Nitride Laser Diode Directly Integrated with Silicon

Sep 9, 2016

Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...

Tags: InGaN Laser diodes, cw, SINANO

Thin-Barrier Quantum Wells Increase Bandwidth of Cyan Light-Emitting Diode

Jun 21, 2016

Researchers based in Taiwan and USA have increased the modulation bandwidth of indium gallium nitride (InGaN) light-emitting diodes (LEDs) [Jin-Wei Shi, IEEE Electron Device Letters, published online 26 May 2016]. The enhanced bandwidth was ...

Tags: InGaN, MQW, LED

Epitaxial Growth of Laser Diodes on Wafer-Bonded InP/Si Substrates

Jun 12, 2016

Sophia University in Japan has developed a technique for growing laser diodes on an indium phosphide (InP) layer bonded to silicon (Si) [Keiichi Matsumoto et al, Appl. Phys. Express, vol9, p062701, 2016]. The researchers claim that this is ...

Tags: Laser Diodes, Si Substrates

Low-Threading-Dislocation AlGaN Template for Ultraviolet Lasers

Nov 19, 2015

Sandia National Laboratories in the USA has reported aluminium gallium nitride (AlGaN) laser structures emitting ~350nm ultraviolet radiation from optical and electrical pumping [Mary H. Crawford et al, Appl. Phys. Express, vol8, p112702, ...

Tags: AlGaN, ultraviolet lasers, LEDs

Shuji Nakamura on The Next Generation Lighting Technologies and Taiwan Market Trends

Nov 10, 2015

Speaking at a press conference with Taiwanese media at Semicon Taiwan on Sept. 2, 2015, Nobel Laureate Shuji Nakamura shared his observations on lighting technology trends and commented on Taiwanese LED manufacturers situation. Nakamura ...

Tags: Shuji Nakamura, Laser Diode, violet-based LEDs

II-VI Semiconductor Green Laser Diode Achieves Lower Current Threshold

Nov 9, 2015

Jijun Feng and Ryoichi Akimoto based in China and Japan have developed low-threshold green and green-yellow laser diodes (LDs) based on a beryllium zinc cadmium selenide (BeZnCdSe) quantum well [Appl. Phys. Lett., vol107, p161101, 2015]. ...

Tags: laser diodes, zirconium dioxide

Semi-Polar InGaN Laser Diodes

Apr 7, 2015

University of California Santa Barbara (UCSB) has used indium tin oxide (ITO) as part of the cladding for semi-polar indium gallium nitride (InGaN) laser diodes (LDs) [A. Pourhashemi et al, Appl. Phys. Lett., vol106, p111105, 2015]. The ...

Tags: Indium, InGaN substrates, Electrical

Molex Incorporated Showcased Its Technical Innovations at BIOMEDevice

Dec 22, 2014

Molex Company showcased a wide range of advanced electronic solutions Molex Incorporated showcased its technical innovations at BIOMEDevice (an MD&M event), San Jose, CA, December 3 – 4, 2014. The company has proven expertise in ...

Tags: Pioneering Technologies, Medtech Devices, Health

BYU Students Has Broken Its Previous World Land Speed Record

Sep 23, 2014

Electric Blue, an electric car built by Brigham Young University (BYU) students has broken its previous world land speed record, by improving the speed by 50 mph. The car also known as E1 streamliner reached an average of 204.9 mph on two ...

Tags: BYU Students, Electric Car, Accessories

Ushio Acquires Oclaro Japan's Industrial & Consumer Laser Diode and LED Business

Aug 7, 2014

Ushio Inc of Tokyo, Japan (which manufactures light sources including lamps, lasers and LEDs) says that its subsidiary Ushio Opto Semiconductors Inc (established in July) has agreed to acquire the LED, red, violet and part of the infrared ...

Tags: Ushio Oclaro Laser diodes LEDs

UCSB Plans to Improve The Performance of Lasers Diodes

Nov 27, 2013

University of California Santa Barbara (UCSB) has been using limited area epitaxy (LAE) to improve the performance of lasers diodes (LDs) grown on free-standing semipolar (20-21) gallium nitride (GaN) substrates [Matthew T. Hardy et al, J. ...

Tags: limited, area, epitaxy, semipolar, GaN, laser

UCSB Has Developed Semipolar Nitride Semiconductor Laser Diodes

Nov 26, 2013

University of California Santa Barbara (UCSB) has developed semipolar (20-2-1) nitride semiconductor laser diodes (LDs) without using aluminium gallium nitride (AlGaN) as the cladding material for optical confinement [A. Pourhashemi et al, ...

Tags: Electrical, Electronics, Semipolar Nitride Laser

LED Applications Will Be The Key Drivers for The Bulk Gallium Nitride Market

Nov 6, 2013

In either a cautious or a more aggressive scenario, LED applications will be the key drivers for the bulk gallium nitride (GaN) market, reckons market research firm Yole Développement in its report 'Free-Standing & Bulk GaN ...

Tags: LED, Electrical, Electronics

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