Laser Diode articles & resources on Made-in-China.com

Market for 405nm Laser Diodes Growing at 8.5% CAGR to $1857.29m in 2025

Nov 28, 2017

The 405nm laser diode market was $904.46m in 2016, and will increase at a compound annual growth rate (CAGR) of 8.5% to $1857.29m in 2025, forecasts a new report from Research N Reports. By product type, the market is segmented into: ...

Tags: laser diode, dental laser gadgets

ProPhotonix Extends Laser Module Range Via Distribution Agreement with Integrated Optics

Nov 8, 2017

ProPhotonix Ltd of Salem, NH, USA, a designer and manufacturer of LED illumination systems and laser diode modules for OEMs and medical equipment companies (as well as a distributor of laser diodes for Ushio, Osram, QSI, Panasonic and Sony) ...

Tags: ProPhotonix, Integrated Optics

Philips Photonics-LED European Consortium Completes VIDaP VCSEL Project

Sep 28, 2017

Philips Photonics of Ulm, Germany - which provides vertical-cavity surface-emitting laser (VCSEL) technology for datacom, consumer and industrial applications - has completed ‘VIDaP’ (VCSEL Pilot Line for Illumination, Datacom ...

Tags: VCSELs, LED

ProPhotonix Adds Optical Options to UV LED Curing Range, Configurable to Specific Applications

Sep 26, 2017

ProPhotonix Ltd of Salem, NH, USA, a designer and manufacturer LED illumination systems and laser diode modules for OEMs and medical equipment companies (as well as a distributor of laser diodes for Ushio, Osram, QSI, Panasonic and Sony) ...

Tags: ProPhotonix, UV LED

II-VI Inc Launches 200W Actively Cooled Laser Bars and Multi-Kilowatt Stacks for New Directed-Energy Weapons

Sep 22, 2017

Engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA (which makes high-power semiconductor laser components) has announced the commercial availability of its actively cooled laser bars, emitting 200W of ...

Tags: Engineered materials, semiconductor

Lumentum Showcases New Technologies and Products at Laser World of Photonics

Jun 27, 2017

In stand #320 (hall A2) at Laser World of Photonics 2017 in Munich, Germany (26-29 June), optical and photonic optical component and subsystem maker Lumentum Holdings Inc of Milpitas, CA, USA is showcasing its latest products addressing the ...

Tags: Pump lasers, 3D sensing

Veeco's Q1 Revenue up 21% Year-on-Year to $94.4m, Driven by LED Demand

May 9, 2017

For first-quarter 2017, epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported revenue of $94.4m, rebounding further from $93.6m last quarter and up 21% on $78m a year ago. This is above ...

Tags: LED Demand, LED industry

CST Global Leads Coolblue Research Project to Develop Next-Generation GaN Laser Technology

Apr 20, 2017

Independent III-V optoelectronic foundry Compound Semiconductor Technologies Global Ltd (CST Global) of Hamilton (near Glasgow), Scotland, UK is taking the commercial lead on the 14-month research project ‘Quantum Cooling using Mode ...

Tags: GaN Laser, GaN

Osram Laser Achieves New Lab Record for Brilliance of 4.8W/mm*mrad

Oct 12, 2016

Osram Opto Semiconductors GmbH of Regensburg, Germany has produced a broad-area laser diode with a lateral brilliance of up to 4.8W per millimeter and milliradiant (W/(mm*mrad)) in the laboratory. The more brilliant the laser, the more ...

Tags: Osram Opto, GmbH

Reducing Laser Diode Optical Leakage with Indium Gallium Nitride Waveguides

Sep 23, 2016

Institute of High Pressure Physics (IHPP) and TopGaN Ltd, both of Poland, have been jointly developing indium gallium nitride (InGaN) waveguide structures for use in blue laser diodes (LDs) [Grzegorz Muziol et al, Appl. Phys. Express, vol9, ...

Tags: IHPP, TopGaN, InGaN, LDs

Indium Gallium Nitride Laser Diode Directly Integrated with Silicon

Sep 9, 2016

Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...

Tags: InGaN Laser diodes, cw, SINANO

Indium Gallium Arsenide Laser Diode on Exact Germanium-on-Silicon Substrate

Sep 9, 2016

Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...

Tags: InGaAs, Laser diodes, III-Vs-on-Si

Thin-Barrier Quantum Wells Increase Bandwidth of Cyan Light-Emitting Diode

Jun 21, 2016

Researchers based in Taiwan and USA have increased the modulation bandwidth of indium gallium nitride (InGaN) light-emitting diodes (LEDs) [Jin-Wei Shi, IEEE Electron Device Letters, published online 26 May 2016]. The enhanced bandwidth was ...

Tags: InGaN, MQW, LED

Epitaxial Growth of Laser Diodes on Wafer-Bonded InP/Si Substrates

Jun 12, 2016

Sophia University in Japan has developed a technique for growing laser diodes on an indium phosphide (InP) layer bonded to silicon (Si) [Keiichi Matsumoto et al, Appl. Phys. Express, vol9, p062701, 2016]. The researchers claim that this is ...

Tags: Laser Diodes, Si Substrates

Japan's SAMCO Adds Local Sales Staff for North American, European and Asian Locations

Apr 15, 2016

Semiconductor process equipment maker SAMCO Inc of Kyoto, Japan is employing about 20 more people at its locations in North America, China, Taiwan and Singapore, as well as its subsidiary Samco-UCP in Liechtenstein, in order to better ...

Tags: Samco

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