MQW

Integrating InGaAs Well in Ridges on 300mm Silicon

Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...

Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University

Indium Gallium Nitride Solar Cells with Positive Temperature Coefficient

Researchers in China have developed indium gallium nitride (InGaN) photovoltaic devices that increase in efficiency with temperature up to 423K [Zhaoying Chen et al, Appl. Phys. Lett., vol109, p062104, 2016]. "The positive efficiency ...

Tags: InGaN solar cells InGaN, MOCVD, positive temperature coefficient

Relaxing Multiple Quantum Wells with Low-Temperature Barriers

South China University of Technology has used low-temperature barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve the light output power of light-emitting diodes (LEDs) by 23% to 63.83mW at 65mA [Zhiting ...

Tags: Low-Temperature Barriers, Quantum

Transfer Printing of Optically Pumped III-V Device on Silicon-on-Insulator

Ghent University/IMEC in Belgium and X-Celeprint in Ireland/USA claim "the first III-V optoelectronic components transfer printed on and coupled to a silicon photonic integrated circuit" [Andreas De Groote et al, Optics Express, vol24, ...

Tags: III-V optoelectronic, silicon photonic

UCSB-LED Team Reports First Quantum Cascade Laser on Silicon

A team led by Alexander Spott of University of California, Santa Barbara – in collaboration with the US Naval Research Laboratory (NRL) and the University of Wisconsin, Madison – has fabricated what is said to be the first ...

Silicon Dioxide Charge Inverter Boosts Hole Injection in IngaN LEDs

Researchers based in China, Singapore and Turkey have used an extremely thin layer of silicon dioxide (SiO2) insulator as a charge inverter in indium gallium nitride (InGaN) light-emitting diodes (LEDs), improving light output power and ...

Tags: InGaN LEDs InGaN Silicon dioxide MOCVD

Demonstration of Novel High-Efficiency Blue LEDs on Silicon Substrates

Shigeya Kimura, Hisashi Yoshida, Toshihide Ito, Aoi Okada, Kenjiro Uesugi and Shinya Nunoue Metal organic chemical vapor deposition is used to grow aluminum gallium nitride interlayers within indium gallium nitride/gallium nitride ...

Tags: High-Efficiency Blue LEDs

Indium Gallium Nitride Barriers Enhance LED Power And Efficiency

South China University of Technology has shown improved power and efficiency performance for indium gallium nitride (InGaN) light-emitting diodes (LEDs) with 1.2% indium-content multiple-quantum-well (MQW) barriers [Zhiting Lin et al, J. ...

Tags: LEDs, MQW, barriers, InGaN, MOCVD

Tantalum Barrier Reduces Gallium Phosphide Contact Resistance

Korea University has been working to improve metal contacts on aluminium gallium indium phosphide (AlGaInP) light-emitting diodes (LEDs) [Dae-Hyun Kim et al, Jpn. J. Appl. Phys., vol55, p032102, 2016]. In particular, the research team added ...

Tags: AlGalnP, Tantalum barrier, LED

Thinning Buffer Layers for GaN-on-Silicon Light-Emitting Diodes

Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...

Tags: GaN-on-silicon LEDs, Plessey MOCVD

Hole Injection From V-Pits Into Indium Gallium Nitride Quantum Wells

Researchers at Nanchang University in China have been studying the effect of V-pits in indium gallium nitride (InGaN) light-emitting diodes (LEDs) on electroluminescence [Xiaoming Wu, Junlin Liu, and Fengyi Jiang, J. Appl. Phys., vol118, ...

Tags: InGaN quantum wells, InGaN LEDs, InGaN