Researchers based in USA have been studying performance improvements in aluminium gallium nitride (AlGaN) ultraviolet (UV) avalanche photodiodes (APDs) gained from using free-standing gallium nitride substrates instead of gallium nitride on ...
Tags: AlGaN, Ultraviolet photodetectors, HVPE
Researchers in Belgium have studied forward gate breakdown of enhancement-mode aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors with p-type GaN gate electrodes [Tian-Li Wu et al, IEEE Electron Device ...
Tags: P-Gan Gate, Electronics
Cambridge Electronics Inc (CEI) – which was spun off from Massachusetts Institute of Technology (MIT) in 2012 – has announced a range of gallium nitride (GaN) transistors and power electronic circuits targeted at cutting energy ...
Trade fair organiser Messe Frankfurt is launching Avantex, a trade fair dedicated to high-tech fabrics for fashion which will run from September 14 to 17, 2015 at Paris Le Bourget in France. “Avantex will highlight intelligent, ...
Tags: Messe Frankfurt, Avantex, high-tech fabrics
Raytheon Company of Waltham, MA, USA says that it has achieved another milestone for next-generation gallium nitride (GaN) radio-frequency (RF) semiconductor technology. Through the US Defense Advanced Research Projects Agency (DARPA) Near ...
Tags: GaN-on-Diamond, GaN-on-SiC
The Centre of Microsystems Technology (CMST), imec’s associated laboratory at Ghent University (Belgium), announced today it has developed an innovative spherical curved LCD display, which can be embedded in contact lenses. The first ...
Tags: Microsystems Technology, CMST, LCD display, LCD
UK-based Oxford Instruments Plasma Technology (OIPT) reports that its first workshop held at MIT’s Microsystems Technology Laboratories (MTL), Cambridge, MA in December was well attended. The workshop addressed the latest research and ...
Tags: OIPT, Plasma, ALD PECVD, Microsystems Technology Laboratories
UK-based etch,deposition and growth system maker Oxford Instruments Plasma Technology(OIPT),part of Oxford Instruments plc,and MIT's Microsystems Technology Laboratories(MTL)of Cambridge,MA,USA will hold a 1 day seminar addressing the ...
Massachusetts Institute of Technology (MIT) researchers have found that a post-etch anneal dramatically improves the performance of their self-aligned indium gallium arsenide (InGaAs) quantum-well metal–oxide–semiconductor ...