Cree Inc of Durham, NC, USA (which makes lighting-class LEDs, LED lighting and power semiconductors) has announced the pricing of $500m of its 0.875% convertible senior notes due 2023 in a private offering to qualified institutional buyers. ...
Tags: LED lighting, LEDs
Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has announced its corporate name change to pSemi Corp, a Murata company ...
Tags: Semiconductor, integrated circuit
Cree Inc of Durham, NC, USA (which makes lighting-class LEDs, LED lighting and power semiconductors) has granted a royalty-bearing, non-exclusive patent license on certain Cree patents for certain LED luminaires to Light Polymers Inc of San ...
Tags: Cree LED, LED lighting
Yole Développement’s ‘RF Power Market and Technologies 2017: GaN, GaAs and LDMOS Report’ forecasts that, after shrinking in 2015 and 2016 as telecom operators invested less, the total RF power semiconductor market ...
Tags: Semiconductor, 4G networks
Spending on RF high-power semiconductors for the wireless infrastructure markets continues to flatten out in 2017, despite the fact that the overall market hit well over $1.4bn in 2016, according to ABI Research. While certain market and ...
Tags: GaN, High-Power Semiconductor
At the InnoTrans trade show in Berlin, Germany (20-23 September), ABB of Zurich, Switzerland is launching a next-generation battery charger based on silicon carbide (SiC) power semiconductors for use in all rail applications. Train ...
Tags: ABB, InnoTrans trade show in Berlin, Sic-based battery charger
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power semiconductors, has been ...
Tags: EpiGaN, GaN-on-Si, nomination
Due to falling prices and the commercial availability of wide-bandgap (WBG) semiconductor power devices from multiple sources, the adoption of silicon carbide (SiC) and gallium nitride (GaN) power devices in power supplies for computers, ...
Tags: Semiconductor, GaN power devices
IXYS Corp of Milpitas, CA, USA and Leiden, The Netherlands, which provides power semiconductors and mixed-signal ICs for power conversion and motor control applications, has announced availability of its IXFN50N120SK and IXFN70N120SK 1200V ...
Spending on RF high-power semiconductors for the wireless infrastructure markets has flattened out this year, despite the fact that the overall market hit well over $1.5bn in 2015, according to ABI Research's report 'RF Power ...
Tags: High-Power Semiconductor, GaN
Infineon Technologies AG of Munich, Germany has entered into a definitive agreement to acquire the Wolfspeed Power & RF division of Cree Inc of Durham, NC, USA for $850m in cash (about €740m). The deal also includes the related silicon ...
Japan's Rohm Semiconductor has announced the availability of a new 1700V silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) optimized for industrial applications, including manufacturing equipment and ...
Tags: SiC, MOSFET, manufacturing equipment
In booth 1655 at the Applied Power Electronics Conference & Exposition (APEC 2016) in Long Beach, CA, USA (20–24 March), Monolith Semiconductor Inc of Round Rock, TX, USA is demonstrating its fast-switching silicon carbide (SiC) ...
Tags: SiC MOSFET, SiC Schottky barrier diodes, SiC power devices
Energized by demand from hybrid and electric vehicles, power supplies and photovoltaic (PV) inverters, the emerging global market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors will rise from just $210m in 2015 to ...
Tags: Semiconductor Market, GaN, SiC
In booth #2244 at the 31st IEEE Applied Power Electronics Conference and Exposition (APEC 2016) in Long Beach (20-24 March), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on ...
Tags: GaN FETs, DC-DC Converter