The global market for radio-frequency (RF) power semiconductor devices – spanning silicon (LDMOS), gallium arsenide (GaAs) and gallium nitride (GaN) – will increase at a compound annual growth rate (CAGR) of nearly 12% during ...
Tags: Semiconductor
Due to falling prices and the commercial availability of wide-bandgap (WBG) semiconductor power devices from multiple sources, the adoption of silicon carbide (SiC) and gallium nitride (GaN) power devices in power supplies for computers, ...
Tags: Semiconductor, GaN power devices
Toyoda Gosei Co Ltd of Kiyosu, Aichi Prefecture, Japan has developed what is claimed to be the first 1.2kV-class power semiconductor device chip capable of large-current operation exceeding 20A. Picture: Forward current–voltage ...
Power semiconductor device manufacturer Rohm Co Ltd of Kyoto, Japan has developed a 1200V/300A full-SiC (silicon carbide) power module - integrating a SiC-SBD (Schottky barrier diode) and SiC-MOSFET (metal-oxide-semiconductor field-effect ...
HexaTech Inc. announced today that it has received a continuation of funding under the U.S. Department of Energy's Advanced Research Projects Agency (ARPA-E) development program. The cost-share extension is valued at $1.2 million over 1 ...
Tags: HexaTech, AlN, semiconductor
After a successful 2013, the market for RF power semiconductors for wireless infrastructure blew off the chart in 2014, according to a new report from market analyst firm ABI Research. The Asia-Pacific region, and China specifically, ...
After two tough years of stagnation, in 2014 the power semiconductor device market returned to growth, rising by 8.4% to $11.5bn, according to the report 'Status of the Power Electronics Industry (February 2015 edition)' from Yole ...
Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA is to showcase its latest power management solutions at PCIM (Power Conversion Intelligent Motion) Europe 2014 in the Nuremberg Exhibition Center, ...
Tags: International Rectifier GaN-on-silicon, semiconductor, Electrical
According to the report 'Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer Market by Technology, Application, Product, Device, & by Geography - Forecast & Analysis to 2013–2022' from MarketsandMarkets, ...
Tags: semiconductor, Electrical, Electronics
Markets for pulsed RF power devices up to 18GHz are expected to show continued solid growth over the next five years - exceeding $250m by 2018 - despite the current economic turmoil and cuts in defense spending, according to the study ...
Tags: ABI RF power semiconductors GaN, Electrical, Electronics
An automated in-situ test method applied alongside Mentor's T3Ster platform can enable SSL product developers to design an optimal thermal management system that can ensure long life and maintained lumen output for LED-based products. To ...
Tags: LEDs, Austria Symposium
Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA has entered into a settlement agreement with El Segundo-based Efficient Power Conversion Corp (EPC) - which makes enhancement-mode gallium nitride on ...
Tags: Electrical, Electronics, semiconductor, Power semiconductor
Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) says that Fumihide ‘Humi’ Esaka will join the firm as its new CEO, starting 1 July. Transphorm reckons that ...
Tags: Transphorm, Electronics Veteran
Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA has qualified and shipped product built on its gallium nitride (GaN)-based power device technology platform for a home theater system manufactured by ...
Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA is to showcase its latest power management solutions at the Applied Power Electronics Conference and Exposition (APEC 2013) at Long Beach Convention ...