Quasi Nominal Silicon

Single-Crystal Gallium Arsenide on Quasi-Nominal Silicon
Dec 16, 2015
Université Grenoble Alpes in France and Applied Materials in the USA have been developing techniques to grow gallium arsenide (GaAs) on silicon substrates with a small offcut angle [Y. Bogumilowicz et al, Appl. Phys. Lett., vol107, ...

Tags: GaAs, Quasi-Nominal Silicon, MOVPE