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RF devices
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Veeco Reports Higher-Than-Expected Q2 Profits, Despite Falling Revenue From Sales of Blue LED MOCVD Systems to China
Aug 8, 2018For second-quarter 2018, epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported revenue of $157.8m, down slightly on $158.6m last quarter but up 40.6% on $112.2m a year ago. ...
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RF Power Semiconductor Device Market Growing at CAGR of Nearly 12% to 2021
Jan 15, 2018The global market for radio-frequency (RF) power semiconductor devices – spanning silicon (LDMOS), gallium arsenide (GaAs) and gallium nitride (GaN) – will increase at a compound annual growth rate (CAGR) of nearly 12% during ...
Tags: Semiconductor
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SPTS's Omega Plasma Etch System Chosen by Hiwafer for New 6'' GaN-on-SiC High-Power RF Device Production Line
Nov 28, 2017SPTS Technologies Ltd of Newport, Wales, UK (an Orbotech company that manufactures etch, PVD and CVD wafer processing solutions for the MEMS, advanced packaging, LED, high-speed RF on GaAs, and power management device markets) has won an ...
Tags: SPTS, GaN-on-SiC, LED
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Wolfspeed Extends 50V GaN Hemt Family to High-Efficiency 3.0GHz 250W
Aug 28, 2017Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — has extended its ...
Tags: Wolfspeed, silicon carbide
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Carbonics Introduces Carbon-on-Silicon Wafers for RF Components in 5G Wireless
Apr 7, 2017Carbonics Inc of Marina Del Rey, CA, USA has launched its ZEBRA carbon-on-silicon technology for radio frequency (RF) components and devices in wireless, communications, defense and aerospace markets. Carbonics was spun out from ...
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CNR-IMM Italy Using Sentech Peald System for New High-K Materials on Wide-Bandgap Devices
Oct 12, 2016SENTECH Instruments GmbH of Berlin, Germany says that the Institute for Microelectronics and Microsystems (CNR-IMM) in Catania – which is part of the Physics and Matter Technologies Department (DSFTM) of the National Research Council ...
Tags: SENTECH Instruments GmbH, CNR-IMM
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Oxford Instruments Develops SiC Via Etch for GaN-on-SiC RF Device Manufacture
Oct 12, 2016UK-based process equipment maker Oxford Instruments has announced the development and launch of a silicon carbide (SiC) via plasma etch process using its PlasmaPro100 Polaris etch system. SiC is becoming an increasingly important ...
Tags: Oxford Instruments, SiC, GaN RF devices
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Wolfspeed Launches Highest-Power 50V L-Band Radar GaN HEMT
Sep 23, 2016In booth 156 at European Microwave Week (EuMW 2016) in London, UK (3–7 October), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility ...
Tags: Wolfspeed, GaN-on-SiC, HEMTs, EuMW 2016
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Technavio Details Top Four Drivers of RF IC Market
Sep 7, 2016The global radio frequency (RF) IC market will increase at a compound annual growth rate (CAGR) of nearly 12% from 2016 to 2020, forecasts a report by Technavio. Asia-Pacific (APAC) is expected to be the main demand-generating region and ...
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EpiGaN Adds Brussels/Beijing-Based Private Equity Fund ACAPITAL as Investor
Aug 31, 2016EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power and RF devices, says that ...
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RF Power Semiconductor Market to Grow at 15.4% CAGR, Almost Tripling From $10.57bn in 2015 to $31.26bn in 2022
Jun 23, 2016The RF power semiconductor market will grow from $10.57bn in 2015 to $31.26bn in 2022, rising at a compound annual growth rate (CAGR) of 15.4% between 2016 and 2022, forecasts the firm MarketsandMarkets. According to the report 'RF Power ...
Tags: Marketsandmarkets, CAGR
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MACOM Launches 300w Plastic-Packaged GaN-on-Si Power Transistor for Commercial RF Energy Applications
May 20, 2016MACOM Technology Solutions Holdings Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched the MAGe-102425-300, a 300W gallium ...
Tags: MACOM, semiconductors, photonic applications
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Wolfspeed's GaN RF Devices Demonstrate Reliability for Harsh Space Environments
Apr 15, 2016Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that its GaN-on-SiC RF power transistors have completed testing ...
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US Air Force Offering $13.5m Cooperative Agreement to Develop Large-Diameter SiC Substrates
Apr 6, 2016The US Department of Defense's Air Force Research Laboratory, Sensors Directorate, Devices for Sensing Branch (AFRL/RYDD) has issued a Request For Information (RFI) titled 'Development of Large Diameter Silicon Carbide Substrate and ...
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GaN RF Device Market to Grow at 14% CAGR, Rising by 2.5x by End-2022
Mar 30, 2016Led by adoption across various market segments, the gallium nitride (GaN) RF device market will double over the next five years, reckons Yole Développement in its new report 'GaN RF Devices Market: Applications, Players, Technology, ...
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