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RF power transistors
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RJR Ships 10 Millionth Air-Cavity Plastic Package, Highlighting Migration From Air-Cavity Ceramic Packaging for RF
May 20, 2016RJR Technologies Inc of Oakland, CA, USA, a developer and high-volume manufacturer of air-cavity plastic (ACP) semiconductor packaging for RF and microwave markets, has shipped over 10 million ACP packages, reflecting the increasing use of ...
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Wolfspeed's GaN RF Devices Demonstrate Reliability for Harsh Space Environments
Apr 15, 2016Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that its GaN-on-SiC RF power transistors have completed testing ...
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Wolfspeed Ships GaN RF Devices Surpassing 1.3GW Output While Maintaining FIT Rate Of 5-Per-Billion Device
Mar 16, 2016Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that, as of the end of 2015, it had shipped gallium nitride on ...
Tags: Wolfspeed, Research Triangle Park
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Ampleon Expands GaN RF Power Transistor Range
Dec 17, 2015After the RF Power business of NXP Semiconductors N.V. was acquired by China's Jianguang Asset Management Co Ltd (JAC Capital), the newly created firm Ampleon of Nijmegen, The Netherlands has extended its portfolio of gallium nitride (GaN) ...
Tags: Ampleon, GaN RF Power Transistor, broadband
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Infineon Introduces GaN Devices for Mobile Base Station Transmitters
Nov 5, 2015Infineon Technologies AG introduced its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors at this year's European Microwave Week. As part of Infineon’s industry-leading GaN portfoliothe ...
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Infineon Introduces GaN Devices for Mobile Base-Station Transmitters; Charts Path to 5G Cellular Infrastructure
Sep 15, 2015In booth C309 (Hall Ternes) at European Microwave Week (EuMW 2015) in Paris, France (6-11 September), Infineon Technologies AG of Munich, Germany has introduced its first devices in a family of gallium nitride on silicon carbide ...
Tags: EuMW 2015, GaN-on-silicon, GaN-on-SiC, PA
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USA Has Launched Two Ultra-Wideband RF Power GaN Transistors in New Plastic Packages
May 21, 2015RF power transistors supplier Freescale Semiconductor of Austin, TX, USA has launched two ultra-wideband RF power gallium nitride (GaN) transistors in new plastic packages. "The industry-leading bandwidth of these two products will enable ...
Tags: GaN Transistors, Plastic Packages
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Microsemi Offers RF,Microwave,and Millimeter-Wave Antenna-to-Bits Solutions
May 18, 2015In booth #1348 at the 2015 IEEE MTT-S International Microwave Symposium & Exhibition (IMS 2015) in Phoenix, Arizona (17-22 May), Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated ...
Tags: Microsemi, Microwave Devices
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Freescale Has Introduced a 125W Cw Gan-on-Sic Transistor
Dec 3, 2014RF power transistors supplier Freescale Semiconductor of Austin, TX, USA has introduced what are claimed to be the industry’s highest thermal and wideband performance GaN device with a 125W continuous wave (CW) gallium nitride on ...
Tags: Power Transistor, Electrical
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M/A-COM Launched a Gallium Nitride on Silicon Carbide HEMT Pulsed Power Transistor
Aug 27, 2014M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has launched a gallium nitride on silicon carbide (GaN-on-SiC) ...
Tags: M/A-COM, Transistor, Electrical
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M/A-COM Announced The Availability and Full Technical Support
May 1, 2014M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has announced the availability and full technical support for 17 ...
Tags: Electrical, Electronics
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Freescale Semiconductor Is Claimed to Be The First 2W Integrated Power Amplifier
Mar 25, 2014Freescale Semiconductor of Austin, TX, USA, which provides RF power transistors for cellular markets, has launched what is claimed to be the first 2W integrated power amplifier (PA) operating with a 5V supply and delivering more than 40dB ...
Tags: Freescale InGaP HBT, Electrical, Electronics
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Nitronex Launched The Npa1006, a 28V, 20MHz-1GHz, 15W Broadband Gan Amplifier
Dec 30, 2013Nitronex LLC of Morrisville, NC, USA, which designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power transistors for the defense, communications, broadband, and industrial markets, has launched the NPA1006, a 28V, 20MHz-1GHz, ...
Tags: Electrical, Electronics
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RF Micro Devices Introduced What It Claims Are The World's First 6-Inch GaN-on-SiC Wafers
Sep 19, 2013RF Micro Devices Inc of Greensboro, NC, USA has introduced what it claims are the world's first 6-inch gallium nitride on silicon carbide (GaN-on-SiC) wafers for manufacturing RF power transistors for both military and commercial use. The ...
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Freescale's RF Devices Can Meet The Requirements of The US Aerospace and Defense Market
Jun 7, 2013Freescale Semiconductor of Austin, TX, USA, which provides RF power technology for cellular markets, has announced a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet ...
Tags: Freescale, Electrical
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