Rohm articles & resources on Made-in-China.com

IR LED Market Growing at 15% CAGR to Over $1bn by 2024

Sep 17, 2018

The infrared (IR) LED market will exceed $1bn by 2024, as shipments rise from over $400m in 2017 then at a compound annual growth rate (CAGR) of over 15% between 2018 and 2024, forecasts a report by Global Market Insights Inc that covers ...

Tags: LED market, IR LED

ROHM Supplying Full-SiC Power Modules to Venturi Formula E Racing Team

Dec 5, 2017

ROHM of Kyoto, Japan is to provide full-SiC (silicon carbide) power modules to the VENTURI Formula E team during season 4 (2017–2018) of FIA Formula E (the world’s first formula racing championship for all-electric vehicles), ...

Tags: Power Modules, silicon carbide

SiC Power Device Market to Grow at 40% CAGR From 2020 to More Than $1bn in 2022, After Tipping Point in 2019

Sep 27, 2017

“The SiC power business is concrete and real, with a promising outlook,” said Yole Développement in 2016. The trend has not changed in 2017, and the SiC industry is going even further as industrial players have increasing ...

Tags: SiC power, SiC devices

ROHM Shrinks Two-Color Chip LED by 35% Into 1608-Size Form Factor

Aug 28, 2017

ROHM Semiconductor of Kyoto, Japan has launched what it claims is the industry’s smallest class (1608 size) of two-color chip LEDs. The SML-D22MUW also features a special design that is said to improve reliability along with a ...

Tags: LED, displays

Rohm Expands Full-SiC Power Module Lineup

May 23, 2017

Japan’s ROHM Semiconductor has developed 1200V 400A/600A-rated full-silicon carbide (SiC) power modules [BSM400D12P3G002/BSM600D12P3G001] - available in June (for samples and OEM quantities) - optimized for inverters and converters in ...

Tags: power modules, Semiconductor

AgileSwitch to Be Awarded Patent for Augmented Turn-off SiC Module Switching Technique

Oct 12, 2016

AgileSwitch LLC of Philadelphia, PA, USA - which produces plug-and-play, programmable silicon IGBT and silicon carbide (SiC) MOSFET gate drive assemblies to address demands for higher performance and functionality at higher voltages and ...

Tags: SiC MOSFET, AgileSwitch LLC

Rohm Launches 1700V SiC Mosfet

Jul 12, 2016

Japan's Rohm Semiconductor has announced the availability of a new 1700V silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) optimized for industrial applications, including manufacturing equipment and ...

Tags: SiC, MOSFET, manufacturing equipment

Rohm Showcasing New Third-Generation 650V SiC Schottkys and 1200V/180A Full-SiC Modules at PCIM

Apr 21, 2016

In hall 9, booth 316 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremberg, Germany (10-12 May), Japan's Rohm Semiconductor is showcasing its latest power products for high-speed switching and high-power performance, while ...

Tags: Rohm SiC Schottky barrier diodes SiC power MOSFET

GaN Power Devices Market to Grow at 24.5% to $2.6bn in 2022

Feb 29, 2016

The global gallium nitride (GaN) power device market will rise at a compound annual growth rate (CAGR) of 24.5% from 2016 to $2.6bn in 2022, according to the report 'GaN Power Devices Market - Global Forecast to 2022' from ...

Tags: GaN power devices

New High Brightness Single Rank Chip LEDs from ROHM for Industrial Equipment

Dec 16, 2015

ROHM's new 1608-size chip LEDs allows a wide range of applicaitons, from industrial equipment to automotive systems. (ROHM/LEDinside) ROHM has recently announced the availability of high accuracy single-rank 1608-size high-brightness chip ...

Tags: ROHM, Single Rank Chip LEDs, High Brightness

Rohm Expands Full-Sic Power Module Lineup with 1200V/300A Model for High-Power Inverters and Converters in Solar Power Conditioners and Industrial Equipment

Dec 2, 2015

Power semiconductor device manufacturer Rohm Co Ltd of Kyoto, Japan has developed a 1200V/300A full-SiC (silicon carbide) power module - integrating a SiC-SBD (Schottky barrier diode) and SiC-MOSFET (metal-oxide-semiconductor field-effect ...

Tags: Rohm, SiC Schottky barrier diodes, SiC power MOSFET

SiC, GaN and Other Wider-Bandgap Materials Present New Choices for Power Electronics

Oct 19, 2015

When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...

Tags: Power Electronics, semiconductor, LED

Lasertec Launches System for Concurrent Surface and Pl Crystallographic Defect Inspection of SiC Wafers

Sep 29, 2015

Metrology and inspection equipment maker Lasertec Corp of Yokohama, Japan has launched SICA88, the latest model of its SiC wafer inspection and review systems. Featuring both surface and photoluminescence (PL) inspection capabilities, ...

Tags: Lasertec, SiC Wafers

Silicon Carbide Chip Business Was Worth More Than $133m

Aug 4, 2015

According to the report 'GaN and SiC for power electronics applications' from Yole Développement, in 2014 the silicon carbide (SiC) chip business was worth more than $133m, with power factor correction (PFC) and photovoltaics (PV) ...

Tags: SiC Market, power electronics

Japan's Rohm Started Mass Production of Silicon Carbide Mosfet

Jun 9, 2015

Japan's Rohm Co Ltd has started mass production of what it claims is the first silicon carbide (SiC) MOSFET (metal-oxide-semiconductor field-effect transistor) with a trench structure (where the gate is formed on the sidewall of a groove in ...

Tags: ROHM Semiconductor SiC power MOSFET, Sic Mosfet

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