SiC Wafers articles & resources on Made-in-China.com

Showa Denko Acquiring SiC Sublimation-Recrystallization Assets From Nippon Steel

Aug 9, 2017

Tokyo-based Showa Denko K.K. (SDK) says that, by the end of January 2018, it will acquire assets from Nippon Steel & Sumitomo Metal Corp (NSSMC) and Nippon Steel & Sumikin Materials Co Ltd (NSMAT) concerning the ...

Tags: SDK, Nippon Steel

Disco Develops Laser Ingot Slicing Method to Speed Sic Wafer Production and Cut Material Loss

Aug 12, 2016

Tokyo-based equipment maker Disco Corp has developed the KABRA (Key Amorphous-Black Repetitive Absorption) laser ingot slicing method. Implementing the process is said to enable high-speed production of silicon carbide (SiC) wafers, ...

Tags: SiC, Disco Corp, laser ingot slicing method

SiC Power Market Growing at CAGR of 19% to 2021 as It Spreads to More Applications

Jul 26, 2016

When the first SiC diode was launched in 2001, the industry questioned the future of the SiC power business: Will it grow? Is this a real business? But 15 years later, in 2016, people don't ask these questions anymore, since the SiC power ...

Tags: SiC Power, SiC device

Monolith Demonstrating Fast-Switching SiC MOSFETs At APEC

Mar 16, 2016

In booth 1655 at the Applied Power Electronics Conference & Exposition (APEC 2016) in Long Beach, CA, USA (20–24 March), Monolith Semiconductor Inc of Round Rock, TX, USA is demonstrating its fast-switching silicon carbide (SiC) ...

Tags: SiC MOSFET, SiC Schottky barrier diodes, SiC power devices

X-FAB Offers High-Volume 6-Inch SiC Foundry Production

Mar 15, 2016

X-FAB Silicon Foundries of Erfurt, Germany - a mixed-signal IC, sensor and micro-electro-mechanical systems (MEMS) foundry – has entered wide-bandgap semiconductor production by announcing the availability of silicon carbide (SiC) ...

Tags: SiC MOSFET SiC Schottky barrier diodes SiC power devices

Technavio Profiles Top-Four Vendors in Packaged GaN LED Market for 2016-2020

Feb 18, 2016

In its report 'Global Packaged Gallium Nitride (GaN) LED Market 2016-2020' – which forecasts a compound annual growth rate (CAGR) of more than 5% – market research firm Technavio has profiled the top four leading vendors (Cree ...

Tags: GaN LED, LED Market

SiC, GaN and Other Wider-Bandgap Materials Present New Choices for Power Electronics

Oct 19, 2015

When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...

Tags: Power Electronics, semiconductor, LED

Lasertec Launches System for Concurrent Surface and Pl Crystallographic Defect Inspection of SiC Wafers

Sep 29, 2015

Metrology and inspection equipment maker Lasertec Corp of Yokohama, Japan has launched SICA88, the latest model of its SiC wafer inspection and review systems. Featuring both surface and photoluminescence (PL) inspection capabilities, ...

Tags: Lasertec, SiC Wafers

Qorvo to Double GaN Capacity After Scaling From 4- to 6-Inch Wafers

Aug 27, 2015

Qorvo Inc, a provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, says that it has scaled its proprietary QGaN25 gallium nitride (GaN) on silicon carbide (SiC) process to produce ...

Tags: Qorvo, CATV

M/A-COM Has Launched Its Fourth Generation of GaN-on-Si Technology

May 14, 2015

M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched its fourth generation of gallium nitride on ...

Tags: GaN Technology, silicon carbide

Episil Semiconductor Wafer Put Into Operation an Aix G5 WW CVD Reactor for SiC Epitaxy

Mar 4, 2015

Deposition equipment maker Aixtron SE of Aachen, Germany says that Taiwanese group Episil Semiconductor Wafer Inc has put into operation an AIX G5 WW (Warm-Wall) chemical vapor deposition (CVD) reactor for silicon carbide (SiC) epitaxy. ...

Tags: silicon components, Electronics

Germany Developed GaN HEMTs on Sic Layers on Silicon Wafers

Jan 5, 2015

Researchers in Germany have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on silicon carbide (SiC) layers on silicon wafers [Wael Jatal et al, IEEE Electron Device Letters, published online 11 December 2014]. ...

Tags: Cubic Silicon Carbide, Electrical

Germany Has Teamed up with Fraunhofer Iisb to Develop 150mm SiC

Sep 10, 2014

Deposition equipment maker Aixtron SE of Aachen, Germany has teamed up with research institution Fraunhofer IISB (Institute for Integrated Systems and Device Technology) in Erlangen, Germany, to develop 150mm silicon carbide (SiC) epitaxy ...

Tags: Aixtron CVD SiC, Electrical, Electronics

Dow Corning Corp Introduced a Product Grading Structure for SiC Crystal Quality

May 13, 2014

Dow Corning Corp of Midland, MI, USA, which provides silicon and wide-bandgap semiconductor technology, has introduced a product grading structure for silicon carbide (SiC) crystal quality that specifies new tolerances on killer device ...

Tags: Dow Corning SiC substrates, Electrical, Electronics

GaN-on-Si Plans to Increase at a Compound Annual Growth Rate of 69%

Dec 9, 2013

The penetration of gallium nitride-on-silicon (GaN-on-Si) wafers into the light-emitting diode (LED) market is forecast to increase at a compound annual growth rate (CAGR) of 69% from 2013 to 2020, by which time they will account for 40% of ...

Tags: LED, electronics

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