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SiC devices
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ON Semiconductor Extends Sic Diode Portfolio by Adding 650V Schottkys
Mar 2, 2018ON Semiconductor of Phoenix, AZ, USA – which supplies power management, analog, sensors, logic, timing, connectivity, discrete, system-on-chip (SoC) and custom devices – has extended its silicon carbide (SiC) diode portfolio by ...
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SiC Power Device Market to Grow at 40% CAGR From 2020 to More Than $1bn in 2022, After Tipping Point in 2019
Sep 27, 2017“The SiC power business is concrete and real, with a promising outlook,” said Yole Développement in 2016. The trend has not changed in 2017, and the SiC industry is going even further as industrial players have increasing ...
Tags: SiC power, SiC devices
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Microsemi Awarded Contract to Speed Adoption of SiC Technology as New Member of PowerAmerica
Aug 23, 2017Microsemi Corp of Aliso Viejo, CA, USA (which makes chips for aerospace & defense, communications, data-center and industrial markets) has become a member of PowerAmerica — a manufacturing institute consisting of public and private ...
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Monolith Makes Availability 1200V SiC Schottky Engineering Samples
Oct 12, 2016Monolith Semiconductor Inc of Round Rock, TX, USA has announced the availability of engineering samples of 1200V, 5A and 10A silicon carbide (SiC) Schottky diodes in a TO-220 package. Manufactured in the 150mm SiC foundry of X-FAB Texas, ...
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SiC Power Market Growing at CAGR of 19% to 2021 as It Spreads to More Applications
Jul 26, 2016When the first SiC diode was launched in 2001, the industry questioned the future of the SiC power business: Will it grow? Is this a real business? But 15 years later, in 2016, people don't ask these questions anymore, since the SiC power ...
Tags: SiC Power, SiC device
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Hybrid III-Nitride and Silicon Carbide High-Voltage Power Transistors
Jun 21, 2016Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
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Wolfspeed Launches All-SiC Half-Bridge Power Module & Gate Driver Combination
May 11, 2016In booth 9-242 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremburg, Germany (10–12 May), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes silicon carbide (SiC) power products including ...
Tags: Power Module, Gate Driver
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CISSOID Delivers Prototypes of Three-Phase 1200V/100A SiC MOSFET Intelligent Power Modules to Thales
Apr 19, 2016Fabless high-temperature and and extended-lifetime semiconductor firm CISSOID of Mont-Saint-Guibert, Belgium has delivered the first prototypes of a three-phase 1200V/100A silicon carbide (SiC) MOSFET intelligent power module (IPM) to ...
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Wolfspeed's GaN RF Devices Demonstrate Reliability for Harsh Space Environments
Apr 15, 2016Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that its GaN-on-SiC RF power transistors have completed testing ...
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GaN RF Device Market to Grow at 14% CAGR, Rising by 2.5x by End-2022
Mar 30, 2016Led by adoption across various market segments, the gallium nitride (GaN) RF device market will double over the next five years, reckons Yole Développement in its new report 'GaN RF Devices Market: Applications, Players, Technology, ...
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Monolith Demonstrating Fast-Switching SiC MOSFETs At APEC
Mar 16, 2016In booth 1655 at the Applied Power Electronics Conference & Exposition (APEC 2016) in Long Beach, CA, USA (20–24 March), Monolith Semiconductor Inc of Round Rock, TX, USA is demonstrating its fast-switching silicon carbide (SiC) ...
Tags: SiC MOSFET, SiC Schottky barrier diodes, SiC power devices
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Wolfspeed Ships GaN RF Devices Surpassing 1.3GW Output While Maintaining FIT Rate Of 5-Per-Billion Device
Mar 16, 2016Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that, as of the end of 2015, it had shipped gallium nitride on ...
Tags: Wolfspeed, Research Triangle Park
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X-FAB Offers High-Volume 6-Inch SiC Foundry Production
Mar 15, 2016X-FAB Silicon Foundries of Erfurt, Germany - a mixed-signal IC, sensor and micro-electro-mechanical systems (MEMS) foundry – has entered wide-bandgap semiconductor production by announcing the availability of silicon carbide (SiC) ...
Tags: SiC MOSFET SiC Schottky barrier diodes SiC power devices
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Rohm Expands Full-Sic Power Module Lineup with 1200V/300A Model for High-Power Inverters and Converters in Solar Power Conditioners and Industrial Equipment
Dec 2, 2015Power semiconductor device manufacturer Rohm Co Ltd of Kyoto, Japan has developed a 1200V/300A full-SiC (silicon carbide) power module - integrating a SiC-SBD (Schottky barrier diode) and SiC-MOSFET (metal-oxide-semiconductor field-effect ...
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GaN Systems Announces 10x Production Increase at TSMC
Dec 2, 2015GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, says that Taiwan Semiconductor Manufacturing Corporation (TMSC, the ...
Tags: GaN Systems, E-mode GaN FETs, TSMC
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