Silicon Nitride

UCSB-LED Team Reports First Quantum Cascade Laser on Silicon

A team led by Alexander Spott of University of California, Santa Barbara – in collaboration with the US Naval Research Laboratory (NRL) and the University of Wisconsin, Madison – has fabricated what is said to be the first ...

III-Nitride High-Electron-Mobility Transistors on Flexible Tape

Researchers in France claim the first demonstration of 10GHz large-signal microwave power performance for flexible aluminium gallium nitride (AlGaN) barrier high-electron-mobility transistors (HEMTs) [S. Mhedhbi et al, IEEE Electron Device ...

Tags: AlGaN HEMTs AlGaN HEMTS MBE PECVD

Demonstration of Novel High-Efficiency Blue LEDs on Silicon Substrates

Shigeya Kimura, Hisashi Yoshida, Toshihide Ito, Aoi Okada, Kenjiro Uesugi and Shinya Nunoue Metal organic chemical vapor deposition is used to grow aluminum gallium nitride interlayers within indium gallium nitride/gallium nitride ...

Tags: High-Efficiency Blue LEDs

Non-Alloyed Contacts For Gallium Arsenide Devices

Researchers in Korea have been developing improved non-alloyed contacts for gallium arsenide (GaAs) complementary metal-oxide-semiconductor (CMOS) and high-electron-mobility transistors (HEMTs) [Seung-Hwan Kim et al, IEEE Electron Device ...

Tags: GaAs, HEMTs, CMOS

Aixtron's Revenue Grows 14% In Q4 As Diversification Outweighs LED-Related China Loss

Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has reported full-year revenue for 2015 of €197.8m, up 2% on 2014's €193.8m. Contrary to expectations, San'an Optoelectronics Co Ltd (China's largest ...

Tags: Aixtron MOCVD PECVD OLEDs

Thinning Buffer Layers for GaN-on-Silicon Light-Emitting Diodes

Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...

Tags: GaN-on-silicon LEDs, Plessey MOCVD

Gallium Nitride Phosphide Absorber for Silicon-Based Solar Power

Researchers in the USA have been working on gallium nitride phosphide (GaNP) as an absorbing material for solar power [S. Sukrittanon et al, Appl. Phys. Lett., vol107, p153901, 2015]. The aim of the team from University of California San ...

Tags: Gallium Nitride Phosphide, Solar Power, solar cells

Aixtron's Revenue Grows 35% in Q3

For third-quarter 2015, deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has reported revenue of €54.6m, up 35% on €40.4m last quarter and up 19.7% on €45.6m a year ago due to increased scheduled ...

Tags: Aixtron, lighting market

Forward-Bias Gate Breakdown in HEMTs with Enhancement-Mode P-Gan Gate

Researchers in Belgium have studied forward gate breakdown of enhancement-mode aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors with p-type GaN gate electrodes [Tian-Li Wu et al, IEEE Electron Device ...

Tags: P-Gan Gate, Electronics

Efficient Combination of Quantum Cascade Laser and Detectors

Technische Universit Wien (TU Wien) in Austria has improved its bi-functional 6.8μm quantum cascade laser and detector (QCLD) technology [Benedikt Schwarz et al, Appl. Phys. Lett., vol107, p071104, 2015]. It is hoped that monolithic ...

Tags: Quantum cascade detectors InP InGaAs MBE

High-Performance Gallium Nitride on Low-Resistance Silicon

University of Glasgow and University of Cambridge in the UK have claimed the highest frequency performance to date for gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on low-resistivity (LR) silicon (Si) [A. Eblabla et al, ...

Tags: RF signals, high resistance silicon