Silicon Substrate articles & resources on Made-in-China.com

LED Technology Breakthroughs in 2016

Dec 31, 2016

As 2016 comes to an end, there were many exciting and surprising technology breakthroughs, based on statistics complied by LEDinside there were at least 10 major technology advancements this year. American researchers make droop free LEDs ...

Tags: LED, UV LED

Integrating InGaAs Well in Ridges on 300mm Silicon

Sep 29, 2016

Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...

Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University

Reducing Subthreshold Swing of Gallium Arsenide Transistors

Sep 28, 2016

Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...

Tags: KIST, GaAs, FET

Indium Gallium Arsenide Laser Diode on Exact Germanium-on-Silicon Substrate

Sep 9, 2016

Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...

Tags: InGaAs, Laser diodes, III-Vs-on-Si

EpiGaN Adds Brussels/Beijing-Based Private Equity Fund ACAPITAL as Investor

Aug 31, 2016

EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power and RF devices, says that ...

Tags: EpiGaN, GaN-on-Si, ACAPITAL

EpiGaN Nominated for Eu Innovation Radar Prize

Aug 17, 2016

EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power semiconductors, has been ...

Tags: EpiGaN, GaN-on-Si, nomination

UIUC Uses MOCVD Growth of Cubic GaN on Silicon to Boost Efficiency and Brightness of Green LEDs

Aug 3, 2016

Researchers at the University of Illinois at Urbana Champaign (UIUC) say that they have developed a new method for making brighter and more efficient green LEDs (R. Liu and C. Bayram, 'Maximizing cubic phase gallium nitride surface coverage ...

Tags: Green LEDs, MOCVD

Epigan's Production Facility Certified as Compliant to ISO9001: 2015

Jun 30, 2016

EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers, says that on 7 June it received official notification from the International ...

Tags: EpiGaN, GaN-on-Si

ITRI Nudges Taiwan Hand Tool Makers Into Digital Tool Development

Jun 23, 2016

Ever more Taiwanese hand tool makers have ventured into the development of digital tools to secure sustainable growth, thanks to the nudging by ITRI.Development of digital tools has been regarded as one of Taiwan's hand tool industry's ...

Tags: hand tool makers, underselling rivalry

Subwavelength Micro-Disk Lasers on Exact (001) Silicon Substrate

Jun 23, 2016

Researchers in Hong Kong and USA have been working on producing optically pumped micro-disk lasers on exact (001) silicon [Yating Wan et al, Appl. Phys. Lett., vol108, p221101, 2016]. The team from Hong Kong University of Science and ...

Tags: Subwavelength, CMOS-compatible platform

Fully Vertical Gallium Nitride P-I-N Diode Grown on Silicon Substrate

Apr 29, 2016

Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...

Tags: GaN devices, Silicon Substrate

III-Nitride High-Electron-Mobility Transistors on Flexible Tape

Apr 11, 2016

Researchers in France claim the first demonstration of 10GHz large-signal microwave power performance for flexible aluminium gallium nitride (AlGaN) barrier high-electron-mobility transistors (HEMTs) [S. Mhedhbi et al, IEEE Electron Device ...

Tags: AlGaN HEMTs AlGaN HEMTS MBE PECVD

Direct Growth Of III-V Quantum Dot Lasers On Silicon Substrate

Mar 15, 2016

Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...

Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE

LayTec Details Accurate Wafer Temperature Measurement During GaN-on-Si MOCVD For Power Electronics

Mar 9, 2016

Temperature measurement during metal-organic chemical vapor deposition (MOCVD) growth of GaN-on-silicon (GaN/Si) devices is challenging, notes in-situ metrology system maker LayTec AG of Berlin, Germany. Theoretically, conventional infrared ...

Tags: MOCVD, GaN devices

Suppressing Current Collapse in Normally-off Gallium Nitride Transistor

Nov 12, 2015

Japan's Panasonic Corp has reported the suppression of current collapse up to 800V for a normally-off gallium nitride (GaN) transistor by embedding a hybrid drain in a gate-injection transistor (HD-GIT) structure [Kenichiro Tanaka et al, ...

Tags: Panasonic, GaN transistor, AlGaN

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