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Silicon Wafer
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Solar-Tectic Granted US Patent for Low-Cost, High-Efficiency III-V Thin-Film Tandem Solar Cell on Glass Substrate
Oct 10, 2017Solar-Tectic LLC of Briarcliff Manor, NY, USA says that the US Patent and Trademark Office has granted it US patent 15/205,316 ‘Method of Growing III-V Semiconductor Films for Tandem Solar Cells’ for high-efficiency and ...
Tags: Thin-film PV, Glass Substrate
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Indium Gallium Arsenide Quantum Well Transistors on 300mm Silicon
May 18, 2017Researchers in South Korea and the USA claim record 2190cm2/V-s effective mobility for indium gallium arsenide (InGaAs) quantum well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) on 300mm-diameter (100) silicon ...
Tags: Transistors, MOSFETs
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Prices of 12-Inch Blank Wafers to Rise 10-20%
Dec 9, 2016Chipmakers including Taiwan Semiconductor Manufacturing Company (TSMC), United Microelectronics (UMC) and Micron Technology have been informed by their upstream suppliers that prices for 12-inch blank silicon wafers will rise by up to 20% ...
Tags: Blank Wafers, Semiconductor
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China Solar Poly-Si Wafer Makers Lower Capacity
Sep 15, 2016Some China-based solar-grade polycrystalline silicon wafer makers, in view of high inventory levels due to weak demand, have decreased the utilization of production capacities from 80-100% originally to 50-60%, according to industry ...
Tags: silicon wafer, PV
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Dialog Enters GaN Market with Integrated Devices Targeting Fast-Charging Power Adapters
Aug 30, 2016Dialog Semiconductor plc of London, UK, a fabless provider of highly integrated power management, AC/DC power conversion, solid-state lighting (SSL) and Bluetooth low-energy technology, has announced its first gallium nitride (GaN) power IC ...
Tags: GaN, Dialog Semiconductor plc, SSL
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Onchip Offers Thin-Film Wafer Backside Metallization of Solderable Die-Attach Metal Stacks
Jun 20, 2016Integrated passive device maker OnChip Devices Inc of Santa Clara, CA, USA says that its wafer fabrication facility is offering backside metallization (BSM) of thin films for applications such as military, medical, and instrumentation. ...
Tags: Sputtering, HB-LEDs, GaN-on-Si, Wafer bonding
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UCSB-LED Team Reports First Quantum Cascade Laser on Silicon
Apr 22, 2016A team led by Alexander Spott of University of California, Santa Barbara – in collaboration with the US Naval Research Laboratory (NRL) and the University of Wisconsin, Madison – has fabricated what is said to be the first ...
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III-Nitride High-Electron-Mobility Transistors on Flexible Tape
Apr 11, 2016Researchers in France claim the first demonstration of 10GHz large-signal microwave power performance for flexible aluminium gallium nitride (AlGaN) barrier high-electron-mobility transistors (HEMTs) [S. Mhedhbi et al, IEEE Electron Device ...
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Cadence Offers IC Design Solutions For Fan-out Wafer-Level Chip Scale Packaging
Mar 16, 2016Cadence Design Systems is offering complete IC packaging design and analysis solutions for advanced fan-out wafer-level chip scale packaging (WLCSP) and 2.5D interposer-based designs. Designed to accelerate the multi-chip integration for ...
Tags: Cadence Design system, IC, Packaging
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LayTec Details Accurate Wafer Temperature Measurement During GaN-on-Si MOCVD For Power Electronics
Mar 9, 2016Temperature measurement during metal-organic chemical vapor deposition (MOCVD) growth of GaN-on-silicon (GaN/Si) devices is challenging, notes in-situ metrology system maker LayTec AG of Berlin, Germany. Theoretically, conventional infrared ...
Tags: MOCVD, GaN devices
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POET's Lab-to-Fab Initiative on Track for Product Prototypes and Initial Market Entry in 2016
Feb 19, 2016POET Technologies Inc of San Jose, CA, USA — which has developed the proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated III-V-based electronic and optical devices on a single ...
Tags: POET, Initial Market
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Taiwan GaAs Foundry Wavetek Providing High-Volume Manufacturing Services to POET
Feb 3, 2016POET Technologies Inc of San Jose, CA, USA — which has developed the proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated III-V-based electronic and optical devices on a single ...
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Single-Crystal Gallium Arsenide on Quasi-Nominal Silicon
Dec 16, 2015Université Grenoble Alpes in France and Applied Materials in the USA have been developing techniques to grow gallium arsenide (GaAs) on silicon substrates with a small offcut angle [Y. Bogumilowicz et al, Appl. Phys. Lett., vol107, ...
Tags: GaAs, Quasi-Nominal Silicon, MOVPE
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GaN Systems Announces 10x Production Increase at TSMC
Dec 2, 2015GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, says that Taiwan Semiconductor Manufacturing Corporation (TMSC, the ...
Tags: GaN Systems, E-mode GaN FETs, TSMC
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TSMC Terminating CIGS PV Manufacturing
Aug 27, 2015The world's biggest silicon wafer foundry Taiwan Semiconductor Manufacturing Co Inc (TSMC) says that its subsidiary TSMC Solar Ltd - which was founded in 2009 to make copper indium gallium diselenide (CIGS) photovoltaic modules - will cease ...
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