Researchers in France believe they have made preliminary steps towards establishing a silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) platform for quantum information processing. Quantum information processing ...
The research group of professor Jairo Sinova of the Institute of Physics at Johannes Gutenberg University Mainz, in collaboration with researchers from the UK, Prague, and Japan, has realised for the first time a new, efficient spin-charge ...
Tags: Spin-Charge Converter, GaAs, Electronics
(Phys.org) —Photovoltaic spray paint could coat the windows and walls of the future if scientists are successful in developing low-cost, flexible solar cells based on organic polymers. Scientists at the Department of Energy's Oak ...
Tags: Organic Solar Cells, Heavy Hydrogen, Solar
Topological insulators are the key to future spintronics technologies. EPFL scientists have unraveled how these strange materials work, overcoming one of the biggest obstacles on the way to next-generation applications. Spintronics is an ...
Tags: EPFL, Future Electronic, Material, Physical Review Letters
The discovery of what is essentially a 3D version of graphene – the 2D sheets of carbon through which electrons race at many times the speed at which they move through silicon - promises exciting new things to come for the high-tech ...
Tags: Consumer Electronics, Electronics
"The interface is the device," Nobel laureate Herbert Kroemer famously observed, referring to the remarkable properties to be found at the junctures where layers of different materials meet. In today's burgeoning world of nanotechnology, ...
Tags: Consumer Electronics, Electronics
A breakthrough for the field of Spintronics, a new type of technology which it is widely believed could be the basis of a future revolution in computing, has been announced by scientists in Cambridge. The research, reported in Nature ...
Scientists from SLAC, Stanford and Berkeley Lab grew sheets of an exotic material in a single atomic layer and measured its electronic structure for the first time. They discovered it's a natural fit for making thin, flexible light-based ...
Despite graphene's many impressive properties, its lack of a bandgap limits its use in electronic applications. In a new study, scientists have theoretically shown that a bandgap can be opened in graphene by folding 2D graphene sheets ...
Tags: Graphene, Electrical, Electronics
The 59th annual IEEE International Electron Devices Meeting (IEDM) has issued a Call for Papers seeking original work in microelectronics research and development. The paper submission deadline is Monday, June 24, 2013 at 23:59 p.m. Pacific ...
Tags: Electrical, Electronics, IEDM
A 3D spintronics IC built at Cambridge University could increase chip density by 1000 times. The technique uses an electron’s spin to store data. This is the first time a spintronics device has been built in 3D. The chip is built ...
Tags: 3D spintronics IC, electron, data storing
The U.S. Defense Advanced Research Projects Agency and a consortium of top semiconductor companies are handing out US$194 million to universities for research that addresses the physical limitations of semiconductors and chips. The ...
Tags: U.S.Defense Advanced Research Projects Agency, semiconductor, chips
In a paper set to be published this week in the scientific journal Nature, IBM researchers are claiming a huge breakthrough in spintronics, a technology that could significantly boost capacity and lower power use of memory and storage ...
Tags: IBM, breakthrough, spintronics, memory and storage devices
IBM is working with scientists at ETH Zurich to demonstrate the first-ever direct mapping of the formation of a persistent spin helix in a semiconductor.This has implications for the use of electron spins for storing,transporting and ...
IBM Research and the Solid State Physics Laboratory at ETH Zurich have developed a new method in which the spin lifetime of electrons is extended by 30 times to 1.1 nanoseconds IBM Research and the Solid State Physics Laboratory at ETH ...
Tags: IBM, electrons, semiconductor