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TWT Amplifiers
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Wolfspeed's GaN RF Devices Demonstrate Reliability for Harsh Space Environments
Apr 15, 2016Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that its GaN-on-SiC RF power transistors have completed testing ...
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Wolfspeed Exhibiting GaN HEMTs for Radar Applications at EuMW
Sep 15, 2015In booth #240 at European Microwave Week (EuMW) 2015 in Paris, France (6–11 September), Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors ...
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Cree Launched Two GaN HEMT RF Devices
May 18, 2015Cree Inc of Durham, NC, USA has launched two gallium nitride (GaN) high-electron-mobility transistor (HEMT) RF devices that are said to solve a number of long-standing issues for radar systems employing traditional travelling wave tube ...
Tags: GaN HEMTs, TWT Amplifiers
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Advantech Introduces a 2.5KW TROPO C-band Modular GaN-Based Solid-State Power Amplifier
Dec 18, 2014Advantech Wireless of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has launched a 2.5kW TROPO C-band modular gallium nitride (GaN)-based solid-state power amplifier (SSPA). The new Model ARMA-CL2500A ...
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Cree Has Launched X-Band Fully Matched 50-100W GaN HEMTs
Jun 4, 20124 June 2012 Cree launches X-band fully matched 50-100W GaN HEMTs for commercial radar and satcoms Cree Inc of Durham,NC,USA has launched high-efficiency X-band,fully matched gallium nitride(GaN)high-electron-mobility transistors(HEMTs)for ...
Tags: Cree Inc, GaN HEMTs, high-efficiency X-band, semiconductor, IEEE
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