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SPTS's Omega Plasma Etch System Chosen by Hiwafer for New 6'' GaN-on-SiC High-Power RF Device Production Line

Nov 28, 2017

SPTS Technologies Ltd of Newport, Wales, UK (an Orbotech company that manufactures etch, PVD and CVD wafer processing solutions for the MEMS, advanced packaging, LED, high-speed RF on GaAs, and power management device markets) has won an ...

Tags: SPTS, GaN-on-SiC, LED

POET's Q3 Revenue Rebounds to $715, 420

Nov 15, 2017

For third-quarter 2017, POET Technologies Inc of Toronto, Canada and San Jose, CA, USA —a designer and manufacturer of optoelectronic devices, including light sources, passive waveguides and photonic integrated circuits (PIC) for the ...

Tags: optoelectronic devices, integrated circuits

POET's Q2 Product Revenue up 39% Year-on-Year

Aug 14, 2017

For second-quarter 2017, POET Technologies Inc of San Jose, CA, USA — which has developed the proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated III-V-based electronic and optical ...

Tags: POET Technologies, sensors

Indium Gallium Arsenide Quantum Well Transistors on 300mm Silicon

May 18, 2017

Researchers in South Korea and the USA claim record 2190cm2/V-s effective mobility for indium gallium arsenide (InGaAs) quantum well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) on 300mm-diameter (100) silicon ...

Tags: Transistors, MOSFETs

Cambridge Nanotherm Addresses Thermal Management Challenge of CSP LEDs

Apr 7, 2017

Cambridge Nanotherm Ltd of Haverhill, Suffolk, UK, a producer of nanoceramic thermal management technology, says that its Nanotherm LC thermal management solution addresses the unique needs of chip-scale packaged (CSP) LEDs. CSP LEDs have ...

Tags: CSP LEDs, LEDs

In 2016 The Most Cattle X Mobile Phones Are in This!!!

Dec 16, 2016

Over the past 2016 years, many mobile phone manufacturers launched numerous models of mobile phone products, the tail of the several impressive it? Intelligent mobile phone is homogeneous at the moment, in order to attract the attention of ...

Tags: IPhone 7 Plus, SONY XZ Xperia, LG G5

Berkeley Lab-LED Team Fabricates Transistor with Record 1nm-Long Gate

Oct 12, 2016

A research team led by faculty scientist Ali Javey at the US Department of Energy's Lawrence Berkeley National Laboratory (Berkeley Lab) has created a transistor with a gate length (the defining dimension of a transistor) just 1nm long, ...

Tags: Berkeley Lab, transistor with record 1nm-long gate

CNR-IMM Italy Using Sentech Peald System for New High-K Materials on Wide-Bandgap Devices

Oct 12, 2016

SENTECH Instruments GmbH of Berlin, Germany says that the Institute for Microelectronics and Microsystems (CNR-IMM) in Catania – which is part of the Physics and Matter Technologies Department (DSFTM) of the National Research Council ...

Tags: SENTECH Instruments GmbH, CNR-IMM

Flip-Chip Hybrid External-Cavity Laser Array on Silicon Platform

Oct 8, 2016

Oracle Networking Group in the USA believes that it has made the first demonstration of an integrated surface-normal coupled laser array on a silicon-on-insulator photonics platform [Shiyun Lin et al, Optics Express, vol24, p21455, 2016]. ...

Tags: Oracle Networking Group, laser array

Oxford Instruments Systems Being Used in UV LED Manufacturing

Sep 29, 2016

UK-based Oxford Instruments, which provides process technology equipment for the manufacturing of high-brightness light-emitting diodes (HBLEDs), says that its systems are being used to facilitate the introduction of ultraviolet (UV) LEDs ...

Tags: Oxford Instruments, UV LED

Samsung Starts Mass Producing Industry's First 10-Nanometer Class DRAM

Sep 29, 2016

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing the industry’s first 10-nanometer (nm) class* , 8-gigabit (Gb) DDR4 (double-data-rate-4) DRAM chips and ...

Tags: Samsung, 10nm-class DRAM, DDR4

Reducing Subthreshold Swing of Gallium Arsenide Transistors

Sep 28, 2016

Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...

Tags: KIST, GaAs, FET

Two-Dimensional Gallium Nitride with Graphene Encapsulation

Sep 28, 2016

Researchers in the USA have grown two-dimensional (2D) layers of gallium nitride (GaN) using a graphene encapsulation on silicon carbide (SiC) substrate [Zakaria Y. Al Balushi et al, Nature Materials, published online 29 August 2016]. The ...

Tags: 2D GaN, graphene encapsulation, SiC

Sun Chemical, SunJet to Exhibit New Ink Solutions for Industrial Applications at Inprint 2016

Sep 27, 2016

Sun Chemical, along with its inkjet division SunJet, is set to exhibit new ink solutions for industrial applications at Inprint 2016 in Italy. The event will take place from 15 to 17 November in Milan. Novel ink solutions and inkjet ...

Tags: Sun Chemical, ink solution, Inprint 2016

Boosting Transconductance in Indium Gallium Arsenide finFETs

Sep 6, 2016

Researchers at Massachusetts Institute of Technology (MIT) in the USA have claimed record transconductance for III-V fin field-effect transistors (finFETs) when normalized according to fin width [Alon Vardi and Jesús A. del Alamo, ...

Tags: MIT, finFETs

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