For second-quarter 2018, POET Technologies Inc of Toronto, Canada and San Jose, CA, USA — a designer and manufacturer of optoelectronic devices, including light sources, passive waveguides and photonic integrated circuits (PIC) for ...
Tags: photonic product, POET
PhoeniX Software B.V. of Enschede, The Netherlands - a vendor of photonic design automation (PDA) software used to synthesize integrated photonic circuits - has become a member of the consortium AIM Photonics (American Institute for ...
Tags: EDA software, photoniX, PDA, AIM Photonics
South Korea's Seoul National University has integrated two Advanced Vacuum plasma processing systems from equipment maker Plasma-Therm LLC of St Petersburg, FL, USA into its nanotechnology fabrication lab, which supports multiple users ...
Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that its GaN-on-SiC RF power transistors have completed testing ...
CEA-Leti and its partners in the European FP7 project PLAT4M today announced they have built three silicon photonics platforms. The four-year project, which launched in 2013, aims at building a European-based supply chain in silicon ...
Tags: Leti, Silicon Photonics
Micro/nanotechnology R&D center CEA-Leti of Grenoble, France and its partners say that they have built three silicon photonics platforms, as they reach the mid-point of the four-year European Union Seventh Framework Program (EU FP7) project ...
Tags: Leti, silicon photonics, STMicroelectronics
ACCO Semiconductor Inc of Sunnyvale, CA, USA, a fabless provider of RF front-end component manufactured using standard high-volume bulk CMOS processes, has announced mass production of the AC26120, a CMOS multi-mode multi-band power ...
Tags: ACCO, Semiconductor, smartphones
Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), is exhibiting at the MILCOM 2015 ...
Tags: Wolfspeed, GaN-on-SiC, RF Foundry Services
At the ITF USA 2015 (Imec Technology Forum) in San Francisco on 13 July, nano-electronics research center Imec of Leuven, Belgium has reported a record 11.3% aperture-area efficiency and 11.9% active-area efficiency for its perovskite ...
Tags: IMEC, Thin-film PV, PV Module
Sensor Electronic Technology Inc (SETi) of Columbia, SC, USA, which develops and manufactures deep-ultraviolet (DUV) LED devices and modules, has started shipping samples of its UVC LEDs with 2.5mW of optical power at 265–280nm. First ...
Tags: UVC LEDs, Sensor Electronic
First Solar Inc of Tempe, AZ, USA has raised its world record for cadmium telluride (CdTe) photovoltaic (PV) research cell conversion efficiency from 21% (reported last August) to 21.5%, as certified at the Technology and Applications ...
Tags: PV Cell, Electronics
Following its Manufacturing Advanced Functional Materials (MAFuMa) call issued in February, the UK’s Engineering and Physical Sciences Research Council (EPSRC) has awarded £20m to 10 new research projects that aim to advance the ...
Tags: Functional Materials, Electronics
Magnolia Solar Corp of Woburn, MA and Albany, NY, USA says that on 25 November the United States Patent and Trademark Office (USPTO) issued its subsidiary Magnolia Solar Inc a patent (US Patent No. 8,895,838) describing an improved ...
Tags: multi-junction solar cell, absorber materials, Electrical
Dow Corning Corp of Midland, MI, USA, which provides silicon and wide-bandgap semiconductor technology, has introduced a product grading structure for silicon carbide (SiC) crystal quality that specifies new tolerances on killer device ...
Sun Yat-sen University in China has improved the wall-plug efficiency of indium gallium nitride (InGaN) light-emitting diodes (LEDs) grown on silicon by incorporating a distributed Bragg reflector (DBR) [Yibin Yang et al, Appl. Phys. ...
Tags: InGaN LEDs, Silicon, semiconductor