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finFETs
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Imec Demos First Sub-10nm Germanium Gate-All-Around FETs
Jun 16, 2017At the 2017 Symposia on VLSI Technology and Circuits in Kyoto, Japan (5-8 June), nanoelectronics and photovoltaics research centre Imec of Leuven, Belgium unveiled new process improvements for next-generation devices. For the first time it ...
Tags: Imec, transistors
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Ultratech Receives Multiple Laser System Order
May 22, 2017Ultratech, a supplier of lithography, laser processing and inspection systems used to manufacture semiconductor devices and high-brightness LEDs (HBLEDs), as well as atomic layer deposition (ALD) systems, today announced that it has ...
Tags: laser spike, FinFETs
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Boosting Transconductance in Indium Gallium Arsenide finFETs
Sep 6, 2016Researchers at Massachusetts Institute of Technology (MIT) in the USA have claimed record transconductance for III-V fin field-effect transistors (finFETs) when normalized according to fin width [Alon Vardi and Jesús A. del Alamo, ...
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Kla-Tencor Launched Four New Systems - The 2920 Series at The Semicon West 2014 Trade Show
Aug 20, 2014At the SEMICON West 2014 trade show in San Francisco (8-10 July), process control and yield management solutions provider KLA-Tencor Corp of Milpitas, CA, USA launched four new systems - the 2920 Series, Puma 9850, Surfscan SP5 and eDR-7110 ...
Tags: KLA-Tencor, IC Technologies
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Agilent Announces Innovations of Its Suite of Device Modeling and Software Tools
Jul 7, 2014Agilent Technologies Inc of Santa Clara, CA, USA has announced several innovations for the 2014 release of its suite of device modeling and characterization software tools. The suite comprises the Integrated Circuits Characterization and ...
Tags: GaN HEMTs, 3D Finfets
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The Research Promises to Help Deliver Higher Semiconductor Performance
Jun 11, 2014At the 2014 Symposium on VLSI Technology, University of California, Santa Barbara (UCSB) has reported what are claimed to be the highest-performing III-V metal-oxide semiconductor (MOS) field-effect transistors (FETs). The research ...
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Imec Has Grown to Be a Multi-Disciplinary Expertise Center
Jan 21, 2014Last week nanotechnology research institute imec of Leuven, Belgium celebrated its 30th anniversary. Founded in 1984 as a non-profit organization, imec has grown to be a multi-disciplinary expertise center in the fields of semiconductor ...
Tags: FinFETs, III-V CMOS, ASML of Veldhoven, TSMC
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Engineers at Imec and IBM Have Independently Developed New Manufacturing Processes
Dec 23, 2013Engineers at Imec and IBM have independently developed new manufacturing processes for making the next decade's leading chips, they revealed late last year. These efforts will allow the marriage of silicon wafers and certain exotic ...
Tags: Electrical, Electronics
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IEDM 2013 Was Fabricated with a Silicon Fin Replacement Process on 300mm Silicon Wafers
Dec 13, 2013At the IEEE International Electron Devices Meeting (IEDM 2013) in Washington D.C., USA (9-11 December), nanoelectronics research institute imec of Leuven, Belgium reported the first functional strained germanium (Ge) quantum-well channel ...
Tags: FinFETs III-V CMOS, Electrical, Electronics
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Soitec Entered Into a Patent Cross-License Agreement
Nov 29, 2013Soitec of Bernin, France, which makes engineered substrates - including silicon-on-insulator (SOI) wafers and III-V epiwafers - and silicon wafer manufacturer SunEdison Inc of St. Peters, MO, USA have entered into a patent cross-license ...
Tags: Soitec SOI engineered substrates, Electrical, Electronics
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What Belgium Claims Are The First III-V Compound Semiconductor FinFET Devices
Nov 6, 2013By using a unique silicon fin replacement process, Imec of Leuven, Belgium has demonstrated what it claims are the first III-V compound semiconductor FinFET devices integrated epitaxially on 300mm silicon wafers. The nanoelectronics ...
Tags: FinFETs III-V CMOS, Electrical, Electronics
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Cascade Microtech Acquired ATT Advanced Temperature Test Systems GmbH
Oct 9, 2013Cascade Microtech Inc of Beaverton, OR, USA, which provides equipment enabling precision contact, electrical measurement and test of wafers, ICs, IC packages, circuit boards and modules as well as MEMS, 3D TSV and LED devices, has acquired ...
Tags: Cascade Microtech, Electronics
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Researchers Have Developed Gallium Nitride (GaN) Fin Field-Effect Transistors (FinFETs)
Feb 21, 2013Researchers based in South Korea and France have developed gallium nitride (GaN) fin field-effect transistors (FinFETs) with the lowest claimed subthreshold swing for nitride semiconductor metal-insulator-semiconductor FETs (MISFETs) ...
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Cadence Design Systems Has Agreed to Acquire Cosmic Circuits Private
Feb 16, 2013Cadence Design Systems has agreed to acquire Cosmic Circuits Private, a developer of analogue and mixed signal intellectual property (IP) cores for the 40nm and 28nm semiconductor process nodes. Bangalore-based Cosmic Circuits is also ...
Tags: Cadence Design Systems, Cosmic Circuits Private, semiconductor process
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Cadence Has Announced Samsung Foundry and Globalfoundries Are Supporting Its Design Tools
Feb 5, 2013Cadence has announced that Samsung Foundry and Globalfoundries are supporting its design tools for 20 and 14nm process node. The two foundries are providing SKILL-based process design kits (PDKs) for Cadence's Virtuoso Advanced Node. ...