gallium arsenide articles & resources on Made-in-China.com

ClassOne's Solstice Coppermax Electroplating System Chosen by China's Largest GaAs Device Maker

Aug 27, 2018

ClassOne Technology of Kalispell, MT, USA (which manufactures electroplating and wet-chemical process systems for ≤200mm wafers) has announced a multi-tool sale of its flagship Solstice CopperMax electroplating system to China’s ...

Tags: compound semiconductor, semiconductor

Sanan IC Extends III-V Foundry From Greater China to North American, European and APAC Markets

Aug 27, 2018

Sanan Integrated Circuit Co Ltd (Sanan IC) of Xiamen City, Fujian province (China’s first 6-inch pure-play compound semiconductor wafer foundry) has announced its entry into the North American, European and Asia Pacific (APAC) markets ...

Tags: integrated passive device, filters

Changelight Orders Further Aixtron Aix 2800G4-TM MOCVD Systems to Expand Roy Fine-Pitch and Mini-LED Capacity

Jul 19, 2018

Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany is supplying several more AIX 2800G4-TM cluster metal-organic chemical vapor deposition (MOCVD) systems (for delivery between third-quarter 2018 and first-quarter ...

Tags: Aixtron, MOCVD Changelight, LED

Infineon Ships 5 Billionth Bulk-CMOS RF Switch

Jul 19, 2018

After beginning volume production of its first bulk-CMOS radio frequency (RF) switch in 2008, Infineon Technologies AG of Munich, Germany has now reached an annual run-rate far exceeding 1 billion and a cumulative shipments of 5 billion RF ...

Tags: RF Switch, Infineon

Applied Optoelectronics Announces 200G PAM4 Pin Photodiode Array

Mar 12, 2018

Applied Optoelectronics Inc (AOI) of Sugar Land, TX, USA – a manufacturer of optical components, modules and equipment for fiber access networks in the Internet data-center, cable TV broadband, fiber-to-the-home (FTTH) and telecom ...

Tags: Photodiode Array, optical components

RF Power Semiconductor Device Market Growing at CAGR of Nearly 12% to 2021

Jan 15, 2018

The global market for radio-frequency (RF) power semiconductor devices – spanning silicon (LDMOS), gallium arsenide (GaAs) and gallium nitride (GaN) – will increase at a compound annual growth rate (CAGR) of nearly 12% during ...

Tags: Semiconductor

Qualcomm Announces RF Front-End Design Wins with Google, HTC, LG, Samsung and Sony Mobile

Jan 15, 2018

Qualcomm Technologies Inc, a subsidiary of Qualcomm Inc of San Diego, CA, USA, has announced radio-frequency front-end (RFFE) design wins with leading original equipment manufacturers (OEMs) including Google, HTC, LG, Samsung and Sony ...

Tags: Qualcomm, Google

Changelight Orders Further Aixtron AIX 2800G4-TM MOCVD Systems to Expand Roy LED Capacity

Nov 30, 2017

Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has received an order for multiple AIX 2800G4-TM MOCVD cluster tools from Chinese optoelectronic manufacturer Xiamen Changelight Co Ltd to expand its production ...

Tags: LED Capacity, cluster tools

SPTS's Omega Plasma Etch System Chosen by Hiwafer for New 6'' GaN-on-SiC High-Power RF Device Production Line

Nov 28, 2017

SPTS Technologies Ltd of Newport, Wales, UK (an Orbotech company that manufactures etch, PVD and CVD wafer processing solutions for the MEMS, advanced packaging, LED, high-speed RF on GaAs, and power management device markets) has won an ...

Tags: SPTS, GaN-on-SiC, LED

RF GaAs Device Revenue Growth Slowed to 0.9% in 2016, But Will Rise From $7.5bn to $9.2bn in 2021

Oct 25, 2017

Although the market for RF gallium arsenide (GaAs) devices (merchant and captive, but excluding foundry) rose by just 0.9% in 2016 as an anticipated drop in cellular revenue nearly offset gains in other market segments, revenue still ...

Tags: GaAs RF market, LTE

Solar-Tectic Granted US Patent for Low-Cost, High-Efficiency III-V Thin-Film Tandem Solar Cell on Glass Substrate

Oct 10, 2017

Solar-Tectic LLC of Briarcliff Manor, NY, USA says that the US Patent and Trademark Office has granted it US patent 15/205,316 ‘Method of Growing III-V Semiconductor Films for Tandem Solar Cells’ for high-efficiency and ...

Tags: Thin-film PV, Glass Substrate

II-VI Inc Launches 200W Actively Cooled Laser Bars and Multi-Kilowatt Stacks for New Directed-Energy Weapons

Sep 22, 2017

Engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA (which makes high-power semiconductor laser components) has announced the commercial availability of its actively cooled laser bars, emitting 200W of ...

Tags: Engineered materials, semiconductor

AXT Completes Purchase of New Manufacturing Facility in Dingxing, China

Sep 13, 2017

AXT Inc of Fremont, CA, USA - which makes gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge) substrates and raw materials – has completed the purchase of its new manufacturing facility in the city of Dingxing, China. ...

Tags: gallium arsenide, indium phosphide

Audi to Partner with Hanergy on Solar Technology Installation in Electric Cars

Aug 28, 2017

German luxury auto-brand Audi has signed a Memorandum of Understanding (MOU) with Hanergy Thin Film Power Group for cooperation on thin film solar cell technology in China. The thin film solar panels will be installed on the rooftops of ...

Tags: Audi, Electric Cars

Wolfspeed Extends 50V GaN Hemt Family to High-Efficiency 3.0GHz 250W

Aug 28, 2017

Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — has extended its ...

Tags: Wolfspeed, silicon carbide

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