resistive articles & resources on Made-in-China.com

Aluminium Nitride Schottky Barrier Diodes with Breakdown More Than 1kv

Aug 3, 2017

Arizona State University (ASU) in the USA claims the first demonstration of 1kV-class aluminium nitride (AlN) Schottky barrier diodes (SBDs) [Houqiang Fu et al, IEEE Electron Device Letters, 5 July 2017]. AlN has a wide bandgap of 6.2eV. ...

Tags: semiconductor, MOCVD

III-Nitride High-Electron-Mobility Transistors on Flexible Tape

Apr 11, 2016

Researchers in France claim the first demonstration of 10GHz large-signal microwave power performance for flexible aluminium gallium nitride (AlGaN) barrier high-electron-mobility transistors (HEMTs) [S. Mhedhbi et al, IEEE Electron Device ...

Tags: AlGaN HEMTs AlGaN HEMTS MBE PECVD

China Makers to Ship Over 167 Million Touch Panels

Mar 31, 2016

China-based makers will ship an estimated 167.294 million touch panels in the first quarter of 2016, decreasing 22.0% on quarter but increasing 17.2% on year, according to Digitimes Research. Shipments will consist of 142.794 million ...

Tags: touch panels, smartphones

Volkswagen Announces 2016 Beetle Convertible Denim Special Edition Pricing

Mar 11, 2016

Volkswagen America announced the pricing of the 2016 Beetle Convertible 1.8T Denim limited edition. Paying homage to the 1970s Jeans Bug, the vehicle offers fans a modern take on this classic model, with a starting Manufacturers Suggested ...

Tags: Volkswagen, Beetle Convertible

A Low-Temperature PAMBE Process for Direct Growth of InGaN on Silicon Substrates

Mar 24, 2015

Researchers in Europe have developed a low-temperature plasma-assisted molecular beam epitaxy (PAMBE) process for direct growth of indium gallium nitride (InGaN) on silicon (Si) substrates [Pavel Aseev et al, Appl. Phys. Lett., vol106, ...

Tags: PAMBE GaN InN InGaN Silicon substrate

Deep DUV LEDs Based on III-Nitride Semiconductor Nanowires Have Been Developed

Dec 8, 2014

Ohio State University and University of Illinois at Chicago have developed deep ultraviolet (DUV) light-emitting diodes (LEDs) based on III-nitride semiconductor nanowires [Thomas F Kent et al, Nanotechnology, vol25, p455201, 2014]. The ...

Tags: LEDs, DUV LEDs

The New FAULHABER IEH2-4096 Integrated Encoder Offers Higher Resolution

Apr 24, 2014

MICROMO The new FAULHABER IEH2-4096 integrated encoder offers higher resolution, an expanded operating temperature range and improved speed control, especially in the low speed range. The new FAULHABER IEH2-4096 integrated encoder ...

Tags: Health, Medicine

Sun Yat-sen University in China has improved the wall-plug efficiency

Mar 31, 2014

Sun Yat-sen University in China has improved the wall-plug efficiency of indium gallium nitride (InGaN) light-emitting diodes (LEDs) grown on silicon by incorporating a distributed Bragg reflector (DBR) [Yibin Yang et al, Appl. Phys. ...

Tags: InGaN LEDs, Silicon, semiconductor

Embedding Components Offers a Range of Benefits in Terms of Space and Performance

Mar 17, 2014

Embedding components within a PCB substrate offers a range of benefits in terms of space and performance. But this alternative approach to product design demands support from the entire supply chain, including EDA vendors. Continued ...

Tags: PCB, semiconductor, Electronics

Ordinary Fishing Line and Sewing Thread to Create Incredibly Strong Artificial Muscles

Feb 27, 2014

Ordinary fishing line and sewing thread have joined forces in the lab to create incredibly strong artificial muscles. The new artificial muscles could someday lend superhuman strength to robots and wearable exoskeletons for humans. The ...

Tags: Fishing Line, Artificial Muscles, sewing thread

First Uses of Veniti Vici Venous Stent System Was Announced by Veniti

Jan 26, 2014

Veniti has announced that patients in the EU were successfully treated for symptomatic venous outflow obstruction of the lower extremities with the Veniti Vici venous stent system. These procedures mark the first uses in patients of this ...

Tags: Leipzig, LINC, stent system, demonstration

Highly Sensitive Tactile Sensors Is Developed by Researchers

Jan 22, 2014

From the world of nanotechnology we've gotten electronic skin, or e-skin, and electronic eye implants or e-eyes. Now we're on the verge of electronic whiskers. Researchers with Berkeley Lab and the University of California (UC) Berkeley ...

Tags: Sensors, nanotechnology, Electrical, Electronics

BVM Group Has Introduced The WMP-227V, a 21.5-Inch Touchscreen PanelPC

Jan 20, 2014

The BVM Group has introduced the WMP-227V, a 21.5-inch touchscreen PanelPC developed specifically for use in medical applications and certified to the third edition of EN 60601 -1. The standard defines the basic safety and essential ...

Tags: BVM Group, Touchscreen Panelpc, Medical Applications

Researchers Have Improved The Contact of Graphene with P-Type Gallium Nitride

Jan 9, 2014

Researchers at Korea's Chonbuk National University and Korea Institute of Science and Technology have improved the contact of graphene with p-type gallium nitride (p-GaN), resulting in improved near-ultraviolet (NUV) light-emitting diodes ...

Tags: Near-ultraviolet LEDs, Graphene GaN MOCVD, Gallium Nitride

Scientists Established Supervolcano Eruptions May Occur Spontaneously with X-ray Laborat

Jan 7, 2014

Scientists have reproduced the conditions inside the magma chamber of a supervolcano to understand what it takes to trigger its explosion. These rare events represent the biggest natural catastrophes on Earth except for the impact of giant ...

Tags: supervolcano, explosion, synchrotron X-rays, supervolcano eruption

resistive

Related Products