silicon carbide articles & resources on Made-in-China.com

EpiGan Showcasing GaN Epiwafer Solutions for 5G

Aug 31, 2018

In booth J2554 of its local agent APEC at the SEMICON Taiwan show in Taipei (5-7 September) and in booth 354 at European Microwave Week (EuMW 2018) in Madrid, Spain (23-28 September), EpiGaN nv of Hasselt, near Antwerp, Belgium - which ...

Tags: GaN Epiwafer, epitaxial wafer

Sanan IC Extends III-V Foundry From Greater China to North American, European and APAC Markets

Aug 27, 2018

Sanan Integrated Circuit Co Ltd (Sanan IC) of Xiamen City, Fujian province (China’s first 6-inch pure-play compound semiconductor wafer foundry) has announced its entry into the North American, European and Asia Pacific (APAC) markets ...

Tags: integrated passive device, filters

Cree Prices Offering of $500m Convertible Senior Notes

Aug 23, 2018

Cree Inc of Durham, NC, USA (which makes lighting-class LEDs, LED lighting and power semiconductors) has announced the pricing of $500m of its 0.875% convertible senior notes due 2023 in a private offering to qualified institutional buyers. ...

Tags: LED lighting, LEDs

ON Semiconductor Extends Sic Diode Portfolio by Adding 650V Schottkys

Mar 2, 2018

ON Semiconductor of Phoenix, AZ, USA – which supplies power management, analog, sensors, logic, timing, connectivity, discrete, system-on-chip (SoC) and custom devices – has extended its silicon carbide (SiC) diode portfolio by ...

Tags: sensors, analog

ROHM Supplying Full-SiC Power Modules to Venturi Formula E Racing Team

Dec 5, 2017

ROHM of Kyoto, Japan is to provide full-SiC (silicon carbide) power modules to the VENTURI Formula E team during season 4 (2017–2018) of FIA Formula E (the world’s first formula racing championship for all-electric vehicles), ...

Tags: Power Modules, silicon carbide

SPTS's Omega Plasma Etch System Chosen by Hiwafer for New 6'' GaN-on-SiC High-Power RF Device Production Line

Nov 28, 2017

SPTS Technologies Ltd of Newport, Wales, UK (an Orbotech company that manufactures etch, PVD and CVD wafer processing solutions for the MEMS, advanced packaging, LED, high-speed RF on GaAs, and power management device markets) has won an ...

Tags: SPTS, GaN-on-SiC, LED

Toshiba Adds Second-Generation 650V SiC Schottky Barrier Diodes in DPAK Surface-Mount Package

Oct 24, 2017

Toshiba Electronic Devices & Storage Corp (TDSC) - spun off from Toshiba Corp in July - has enhanced its diode portfolio with the addition of six Schottky barrier diodes (SBDs) fabricated with silicon carbide (SiC) and housed in ...

Tags: Toshiba, Schottky Barrier, Package

Sumitomo Electric Launches Epiera SiC Epiwafer, Achieving 99% Defect-Free Area

Oct 16, 2017

After being showcased at the International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) in Washington DC, USA (17-22 September), Tokyo-based Sumitomo Electric Industries Ltd (SEI) has launched the EpiEra high-quality ...

Tags: Sumitomo Electric, SiC Epiwafer

Laytec Ships in-Situ Metrology System to GaN-on-SiC Customer

Oct 10, 2017

In-situ metrology system maker LayTec AG of Berlin, Germany recently shipped a comprehensive EpiCurve TT/Pyro 400 in-situ metrology hybrid system to an industrial customer in North America. The metrology station combines automated in-situ ...

Tags: MOCVD, GaN-on-SiC

Kyoto University Professor Hiroyuki Matsunami Awarded Honda Prize for Research on SiC Power Devices

Sep 27, 2017

Honda Foundation (a public-interest incorporated foundation created by Honda Motor Co Ltd’s founder Soichiro Honda and his younger brother Benjiro Honda) says that the Honda Prize 2017 will be awarded to Kyoto University professor ...

Tags: Power Devices

Suny Poly Professor Awarded $750, 000 by DOE to Develop More Efficient, Cost-Effective SiC Power Electronics Chips

Sep 26, 2017

State University of New York (SUNY) Polytechnic Institute says that associate professor of nanoengineering Dr Woongje Sung has been selected to receive $750,000 in federal funding from the US Department of Energy (DOE) to develop silicon ...

Tags: Power Electronics Chips, Suny Poly

Mitsubishi Electric Develops SiC Mosfet with Record Power Efficiency for 1200V-Class Power Device

Sep 25, 2017

At the International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) in Washington DC (17-22 September), Tokyo-based Mitsubishi Electric Corp unveiled a silicon carbide (SiC) metal-oxide-semiconductor field-effect ...

Tags: Power Device, Mitsubishi, SiC Mosfet

SDK Expanding High-Grade SiC EPI Production Capacity From 3000 to 5000 Wafers Per Month

Sep 18, 2017

Tokyo-based Showa Denko K.K. (SDK) has decided to expand its facilities for producing high-quality-grade silicon carbide (SiC) epitaxial wafers for power devices - which have already been marketed under the trade name High-Grade Epi (HGE) - ...

Tags: SiC power devices, semiconductors

Picosun Reports Repeat Sales of P-300BV Vacuum Batch Production Tools for 200mm Applications

Sep 4, 2017

Atomic layer deposition (ALD) thin-film technology firm Picosun Oy of Espoo, Finland has reported repeat sales of automated P-300BV vacuum batch production systems to major Asian discrete device manufacturers. Even if the 300mm wafer size ...

Tags: LED lighting, MEMS

ARPA-E Awards $30m for 21 Projects as Part of Circuits Program

Aug 28, 2017

The US Department of Energy’s Advanced Research Projects Agency-Energy (ARPA-E) has announced $30m in funding for 21 projects as part of the CIRCUITS program (‘Creating Innovative and Reliable Circuits Using Inventive Topologies ...

Tags: WBG devices, electronics devices

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