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Osram Launches Oslon Compact Pl LED for Headlights on All Vehicle Classes

Jan 17, 2018

Osram Opto Semiconductors GmbH of Regensburg, Germany has added the new Oslon Compact PL to its portfolio of products for the automotive sector. Particularly suitable for use in vehicle headlights, the LED can be used for adaptive ...

Tags: Osram, LED headlamps

Wolfspeed Extends 50V GaN Hemt Family to High-Efficiency 3.0GHz 250W

Aug 28, 2017

Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — has extended its ...

Tags: Wolfspeed, silicon carbide

Aluminium Nitride Schottky Barrier Diodes with Breakdown More Than 1kv

Aug 3, 2017

Arizona State University (ASU) in the USA claims the first demonstration of 1kV-class aluminium nitride (AlN) Schottky barrier diodes (SBDs) [Houqiang Fu et al, IEEE Electron Device Letters, 5 July 2017]. AlN has a wide bandgap of 6.2eV. ...

Tags: semiconductor, MOCVD

Diamond Materials Market to Grow at 19.26% CAGR to 2021

Jun 21, 2017

The market for global diamond materials for semiconductor applications will rise at a compound annual growth rate (CAGR) of 19.26% over 2017-2021, forecasts a report by Technavio. Diamond materials for semiconductors are crystalline or ...

Tags: Diamond, diamond materials

Element Six Develops New Thermal Grade of CVD Diamond Heat Spreader for High-Frequency, High-Power-Density Devices

Jun 7, 2017

Luxembourg-registered synthetic diamond materials firm Element Six (E6), a member of the De Beers Group of Companies, has developed a new thermal grade of synthetic diamond grown by chemical vapor deposition (CVD). Diafilm ETC700 is both ...

Tags: Element Six Technologies GaN-on-diamond

Cambridge Nanotherm Addresses Thermal Management Challenge of CSP LEDs

Apr 7, 2017

Cambridge Nanotherm Ltd of Haverhill, Suffolk, UK, a producer of nanoceramic thermal management technology, says that its Nanotherm LC thermal management solution addresses the unique needs of chip-scale packaged (CSP) LEDs. CSP LEDs have ...

Tags: CSP LEDs, LEDs

HUAWEI Said The New Graphene Battery Performance Spike Market Most of The Lithium Battery

Dec 12, 2016

Graphene battery is the bubble it Since October 23, 2015, HUAWEI and the United Kingdom, University of Manchester to achieve graphene application research project, we look forward to HUAWEI launched the subversive results, but who are ...

Tags: battery, HUAWEI, graphene

Cree Launches Higher-Efficiency Photo Red Leds, Boosting Output by 21% for Horticulture Applications

Oct 12, 2016

LED chip, lamp and lighting fixture maker Cree Inc of Durham, NC, USA has launched the XLamp XQ-E and XP-E High Efficiency (HE) Photo Red LEDs. With up to 21% higher output than previous generations of XQ-E and XP-E Photo Red LEDs, they ...

Tags: Cree, XLamp XQ-EN Photo Red LEDs, XP-E High Efficiency Photo Red LEDs

Wolfspeed Launches Highest-Power 50V L-Band Radar GaN HEMT

Sep 23, 2016

In booth 156 at European Microwave Week (EuMW 2016) in London, UK (3–7 October), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility ...

Tags: Wolfspeed, GaN-on-SiC, HEMTs, EuMW 2016

Sodium Flux Route to Free-Standing Gallium Nitride Substrates

Jul 19, 2016

Osaka University in Japan has developed a liquid phase epitaxy (LPE) process for the growth of gallium nitride (GaN) in a sodium (Na) flux with a small amount of carbon (C) that, with the addition of lithium (Li) and gallium, can also be ...

Tags: Gallium Nitride Substrates, GaN crystal

Emergence of COB Technology to Boost LED Packaging Equipment Market to $656m in 2020

Jul 12, 2016

The global light-emitting diode (LED) packaging equipment market will rise at a compound annual growth rate (CAGR) of almost 2% to more than $656m in 2020, according to a report by Technavio. The report considers the emergence of COB ...

Tags: LED, packaging equipment, COB

Onchip Offers Thin-Film Wafer Backside Metallization of Solderable Die-Attach Metal Stacks

Jun 20, 2016

Integrated passive device maker OnChip Devices Inc of Santa Clara, CA, USA says that its wafer fabrication facility is offering backside metallization (BSM) of thin films for applications such as military, medical, and instrumentation. ...

Tags: Sputtering, HB-LEDs, GaN-on-Si, Wafer bonding

Qorvo Expands DOCSIS 3.1 CATV Family with Three New Power Doubler MCM Amplifiers

Jun 7, 2016

In booth 10.2/L36 at the ANGA COM 2016 Exposition & Congress for Broadband, Cable and Satellite in Cologne, Germany (7-9 June), Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for ...

Tags: Qorvo, CATV, MCM Amplifiers

III-Nitride High-Electron-Mobility Transistors on Flexible Tape

Apr 11, 2016

Researchers in France claim the first demonstration of 10GHz large-signal microwave power performance for flexible aluminium gallium nitride (AlGaN) barrier high-electron-mobility transistors (HEMTs) [S. Mhedhbi et al, IEEE Electron Device ...

Tags: AlGaN HEMTs AlGaN HEMTS MBE PECVD

Direct Growth Of III-V Quantum Dot Lasers On Silicon Substrate

Mar 15, 2016

Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...

Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE

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