AZZURRO Semiconductors AG of Magdeburg,Germany,which makes gallium nitride(GaN)epitaxial wafers based on large-area silicon substrates,says that its development of next-generation GaN on 200mm silicon substrates is being supported by the local government of Saxony(the location of the firm's production facility,in Dresden).Specifically,the 200mm GaN-on-Si wafer project is being financed with€2.6m from the European Regional Development Fund(ERDF)and the Free State of Saxony.
The official grant note was handed over to the firm during a visit by Saxony's minister for science and technology professor Sabine von Schorlemer,who welcomed AZZURRO as another partner in'Silicon Saxony'."The company's move is another recognition of this great semiconductor location,"she added.
The firm addresses the LED and power semiconductor markets(valued at more than$10bn and$15bn in 2010,respectively).For these markets dynamic technology development is a key factor,AZZURRO reckons.The firm says that,compared with current-generation wafers,its large-diameter GaN-on-Si-wafers enable customers to use low-cost standard silicon processing lines to produce energy-efficient LEDs and power semiconductor devices.
AZZURRO currently has 150mm GaN-on-Si-wafers in production.With the development of 200mm GaN-on-Si-wafers for LED and power semiconductor applications,the firm wants to build on its existing technology to strengthen its competitive position.The performance data achieved on 150mm wafers is already unique,it claims.With the additional funding,AZZURRO is working on extending this performance to 200mm.
"Based on the technology grant,AZZURRO can execute its strategic development of the 200mm technology platform for power semiconductors and LEDs and quickly attend to the strong customer demand,"says VP technology Dr Stephan Lutgen(who heads the development and cooperation with project partner NaMLab gGmbH),commenting on the support from the ministry and the local development bank SAB.
